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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2011-12-16
10:00		 Nara NAIST Effect of High Pressure Water Vapor Annealing on the optical properties of ZnS-based inorganic EL phosphor
Takuya Kontani, Mao Taniguchi, Masahiro Horita (NAIST), Nobuyoshi Taguchi (Image Tech Inc.), Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2011-132		 ZnS-based inorganic EL has been widely studied for next generation display and illumination. In the inorganic EL devices... [more] SDM2011-132
pp.1-5
SDM 2011-12-16
14:00		 Nara NAIST Fabrication of 2D Photonic-Crystal by ZnO using Gel-Nanoimprint Process
Min Zhang, Shinji Araki, Li Lu, Masahiro Horita, Takashi Nishida, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2011-140		 In this research, 2D-photonic-crystal ZnO films were fabricated using sol-gel spin-coating and nanoimprint lithography (... [more] SDM2011-140
pp.43-46
SDM 2011-07-04
16:40		 Aichi VBL, Nagoya Univ. Simultaneous Crystallization of Double-Layered Si Thin Films and Fabciration of Thin Film Devices
Masahiro Horita, Koji Yamasaki, Emi Machida, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2011-68		 We investigate simultaneous crystallization of double-layered silicon thin films on glass substrates by means of green l... [more] SDM2011-68
pp.103-108
SDM 2010-12-17
17:25		 Kyoto Kyoto Univ. (Katsura) Effect of high pressure vapor anneal treatment on the a-In2Ga2Zn1O7 TFTs characteristics
Tomoki Maruyama, Mami Fujii (NAIST), Masashi Kasami, Koki Yano (Idemitsu Kosan), Masahiro Horita, Yasuaki Ishikawa (NAIST), Yukiharu Uraoka (NAIST/JST-CREST) SDM2010-203		 Amorphous oxide semiconductor(a-IGZO) is useful materials to realize transparent flexible Thin Film Transistor (TFT). Po... [more] SDM2010-203
pp.99-102
 Results 21 - 24 of 24 [Previous]  /   
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