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 Results 21 - 36 of 36 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED 2008-07-11
10:50		 Hokkaido Kaderu２・７ High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation
Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92		 We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] ED2008-73 SDM2008-92
pp.177-181
SDM, ED 2008-07-11
14:20		 Hokkaido Kaderu２・７ AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire
Tomohiro Murata, Masayuki Kuroda (Matsushita Electric Industrial), Shuichi Nagai (Panasonic Boston Lab.), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita Electric Industrial), Ming Li (Panasonic Boston Lab.) ED2008-103 SDM2008-122		 We present K-band AlGaN/GaN HFET MMIC amplifiers on sapphire substrates. Integrated AlGaN/GaN HFETs have superlattice ca... [more] ED2008-103 SDM2008-122
pp.331-335
ED, MW 2008-01-16
16:15		 Tokyo Kikai-Shinko-Kaikan Bldg. 10400V Blocking Voltage AlGaN/GaN Power HFET
Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144		 We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] ED2007-213 MW2007-144
pp.39-43
CPM, ED, LQE 2007-10-11
14:55		 Fukui Fukui Univ. High efficiency Ultraviolet LEDs on Si Using InAlGaN Multi-Quantum-Wells with High Indium Contents
Yasuyuki Fukushima, Yuji Takase, Manabu Usuda, Kenji Orita, Tetsuzo Ueda, Tsuyoshi Tanaka (M. E. I. Co., Ltd.) ED2007-159 CPM2007-85 LQE2007-60		 Ultraviolet Light Emitting Diodes (UV-LEDs) are promising for various applications such as photocatalyst or excitation s... [more] ED2007-159 CPM2007-85 LQE2007-60
pp.19-23
CPM, ED, LQE 2007-10-12
09:25		 Fukui Fukui Univ. Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) plane
Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka (MEI) ED2007-166 CPM2007-92 LQE2007-67		 GaN-based compound semiconductors are attractive for low-loss power switching devices owing to the high breakdown field ... [more] ED2007-166 CPM2007-92 LQE2007-67
pp.53-56
ED, SDM 2007-06-25
13:00		 Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Invited Talk] AlGaN/GaN Power Transistors for power switching applications
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Tomohiro Murata, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita) 		Recently developed normally-off transistor named GIT (Gate Injection Transistor) and novel passivation technique using p... [more]
MW, ED 2007-01-19
14:25		 Tokyo Kikai-Shinko-Kaikan Bldg. Improvement of Breakdown Voltage in Double-Heterojunction III-N FET with AlN Buffer Layer
Hisayoshi Matsuo, Hiroaki Ueno, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric Industrial Co., Ltd.) 		 [more] ED2006-234 MW2006-187
pp.189-192
MW, ED 2007-01-19
14:50		 Tokyo Kikai-Shinko-Kaikan Bldg. A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) 		We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transisto... [more] ED2006-235 MW2006-188
pp.193-197
LQE 2006-12-08
10:55		 Tokyo Kikai-Shinko-Kaikan Bldg. Polarization control of VCSEL array by utilizing surface plasmon resonance
Toshikazu Onishi, Tatsuya Tanigawa, Jun Shimizu, Tetsuzo Ueda, Daisuke Ueda (Panasonic) 		 [more] LQE2006-106
pp.17-20
ED, SDM, R 2006-11-24
16:30		 Osaka Central Electric Club Surface Passivation of AlGaN/GaN HFETs by a Sputtered AlN Thin Film
Hiroaki Ueno, Tomohiro Murata, Hidetoshi Ishida, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Kaoru Inoue (Panasonic) 		 [more] R2006-38 ED2006-183 SDM2006-201
pp.39-42
ED, CPM, LQE 2006-10-05
14:40		 Kyoto   GaN Vertical Schottky Barrier Diodes with Pseudo-SuperJunction Structures
Kazushi Nakazawa, Hiroaki Ueno, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric) 		Gallium Nitride (GaN) has been widely investigated for future high power devices owing to its high breakdown field with ... [more] ED2006-156 CPM2006-93 LQE2006-60
pp.23-27
ED, CPM, LQE 2006-10-06
14:30		 Kyoto   Maskless Epitaxial Lateral Overgrowth of GaN Using Dimethylhydrazine as a Nitrogen Precursor
Jun Shimizu, Toshiyuki Takizawa, Tetsuzo Ueda (Matsushita Electric) 		 [more] ED2006-170 CPM2006-107 LQE2006-74
pp.97-101
ED, MW 2006-01-19
11:35		 Tokyo Kikai-Shinko-Kaikan Bldg. Investigation of Bandgap Bowing Parameter of Lattice-Matched Wurtzite InAlGaN Quarternary Alloy
Toshiyuki Takizawa, Satoshi Nakazawa, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric), Takashi Egawa (Nagoya Inst. Tech.) 		 [more] ED2005-202 MW2005-156
pp.17-21
ED, MW 2006-01-19
14:10		 Tokyo Kikai-Shinko-Kaikan Bldg. Normally-off Operation of AlGaN/GaN Heterojunction Field Effect Transistors on Non-polar (11-20) plane
Masayuki Kuroda, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric) 		GaN-based material is attractive for future power devices with high breakdown voltage and low on-state resistance becaus... [more] ED2005-205 MW2005-159
pp.35-39
LQE, ED, CPM 2005-10-13
14:50		 Shiga Ritsumeikan Univ. AlGaN/GaN heterojunction field-effect transistors with InAlGaN quaternary alloy capping layers lattice matched to GaN
Satoshi Nakazawa, Tetsuzo Ueda, Kaoru Inoue, Tsuyoshi Tanaka (Matsushita Electric), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. Tech.) 		 [more] ED2005-130 CPM2005-117 LQE2005-57
pp.57-61
MW, ED 2005-01-18
09:20		 Tokyo   -
Masahiro Hikita, Manabu Yanagihara, Kazushi Nakazawa, Hiroaki Ueno, Yutaka Hirose, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric), Takashi Egawa (Nagoya Inst. of Tech.) 		In order to apply an AlGaN/GaN HFET to high power switching applications, both high breakdown voltage and low on-state r... [more] ED2004-212 MW2004-219
pp.1-5
 Results 21 - 36 of 36 [Previous]  /   
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