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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2010-12-16
14:10		 Miyagi Tohoku University (Research Institute of Electrical Communication) Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators
Atsushi Teranishi, Safumi Suzuki, Kaoru Shizuno, Masahiro Asada (Tokyo Tech), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-159		 We fabricated terahertz oscillators using GaInAs/AlAs double-barrier resonant tunneling diodes with graded emitters on I... [more] ED2010-159
pp.7-12
ED, SDM 2010-06-30
16:10		 Tokyo Tokyo Inst. of Tech. Ookayama Campus Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures
Safumi Suzuki, Kiyohito Sawada, Atsushi Teranishi, Masahiro Asada (Tokyo Inst. of Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-61 SDM2010-62		 We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunnelling diodes (RTDs) ha... [more] ED2010-61 SDM2010-62
pp.47-48
ED 2009-11-29
15:55		 Osaka Osaka Science & Technology Center High Breakdown Voltage InP HEMT 125GHz, 140mW MW Power Amplifier -- Development of 120GHz Broadband Wireless System --
Toshihiko Kosugi, Hiroki Sugiyama (NTT PH Lab.), Akihiko Hirata, Naoya Kukutsu, Hiroyuki Takahashi (NTT MI Lab.), Koichi Murata (NTT PH Lab.) ED2009-164		  [more] ED2009-164
pp.25-30
ED 2009-11-30
09:00		 Osaka Osaka Science & Technology Center Resonant Tunneling Diode Terahertz (0.8-0.9THz) Oscillators with Spike Doping for Low Voltage Operation
Kiyohito Sawada, Safumi Suzuki, Atsushi Teranishi, Masato Shiraishi, Masahiro Asada (Tokyo Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2009-166		 We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunneling diodes (RTDs) hav... [more] ED2009-166
pp.37-40
ED 2007-06-15
16:15		 Toyama Toyama Univ. MOVPE growth of high-quality InP-based resonant tunneling diodes
Hiroki Sugiyama, Hideaki Matsuzaki, Yasuhiro Oda, Haruki Yokoyama, Takatomo Enoki, Takashi Kobayashi (NTT) ED2007-38		 InP-based resonant tunneling diodes (RTDs) with a strained In0.8Ga0.2As well and AlAs barriers were grown by metal-organ... [more] ED2007-38
pp.39-43
 Results 21 - 25 of 25 [Previous]  /   
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