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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ED |
2009-06-25 13:15 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN Ji-Ho Park, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Yong-Tae Kim (Dankook Univ.), Jonghan Song (KIST), Ho-Jung Chang (Dankook Univ.), Shin-ichiro Sato, Takeshi Ohshima (JAEA, Takasaki) ED2009-82 SDM2009-77 |
We investigated the effect of ion-beam-induced damage on luminescence properties for rare earth ions -doped III-nitride ... [more] |
ED2009-82 SDM2009-77 pp.141-144 |
ED, CPM, SDM |
2009-05-15 10:55 |
Aichi |
Satellite Office, Toyohashi Univ. of Technology |
Luminescence dynamics of p-GaPN alloys and application for modulation doped highly-strained GaAsN/GaPN quantum wells. Saburo Mitsuyoshi, Kazuyuki Umeno, Noriyuki Urakami, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-30 CPM2009-20 SDM2009-20 |
We investigated the luminescence properties of Mg-doped p-GaPN alloys grown by molecular beam eitaxy (MBE). The near ban... [more] |
ED2009-30 CPM2009-20 SDM2009-20 pp.65-70 |
ED, CPM, SDM |
2009-05-15 11:20 |
Aichi |
Satellite Office, Toyohashi Univ. of Technology |
Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots Noriyuki Urakami, Ryosuke Noma, Kazuyuki Umeno, Saburo Mitsuyoshi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-31 CPM2009-21 SDM2009-21 |
In order to realize dislocation-free quantum dot (QD) laser diodes on Si, we calculated the conduction band offsets of I... [more] |
ED2009-31 CPM2009-21 SDM2009-21 pp.71-76 |
AP |
2009-01-23 09:30 |
Fukuoka |
Fukuoka University |
Analysis of Electromagnetic Wave Propagation in Periodical and Fractal Multilayer media Using FDTD method Fusei Ishikawa, Jun Sonoda, Keimei Kaino (SNCT), Akihiro Wakahara (TUT) AP2008-175 |
Recently, analysis of electromagnetic wave propagation in fractal structure have been studied. However, almost previous ... [more] |
AP2008-175 pp.145-149 |
CPM, ED, SDM |
2008-05-15 15:50 |
Aichi |
Nagoya Institute of Technology |
Investigation of deep levels in GaPN by photoconductivity transient measurement Keita Izumi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2008-7 CPM2008-15 SDM2008-27 |
In order to realize an optoelectronic integrated circuit(OEIC) united Si integrated circuit and luminescent device, a lu... [more] |
ED2008-7 CPM2008-15 SDM2008-27 pp.29-34 |
CPM, ED, SDM |
2008-05-15 16:15 |
Aichi |
Nagoya Institute of Technology |
Fabrication and evaluation of InGaPN/GaPN DH LED light emitting diode grown by organometallic vapor phase epitaxy. Fumiya Matsuno, Susumu Hatakenaka, Yoshiyuki Nakanishi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. Tech.) |
III-V-N compound semiconductors are one of the promising materials to be applied in OEIC. GaP0.98N0.02 can be lattice-ma... [more] |
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ED, CPM, SDM |
2006-05-19 09:25 |
Aichi |
VBL, Toyohashi University of Technology |
Heteroepitaxy of GaN for Si-GaN OEIC Tatsuya Kawano, Susumu Hatakenaka, Mikinori Itoh, Akihiro Wakahara, Hiroshi Okada, Makoto Ishida (Toyohashi Univ. Tech.) |
A novel Si/GaN/g-Al2O3/Si structure by which both Si-LSI(Large scale integrated circuit) and GaN-based optical devices c... [more] |
ED2006-30 CPM2006-17 SDM2006-30 pp.55-60 |
ED, CPM, SDM |
2006-05-19 09:50 |
Aichi |
VBL, Toyohashi University of Technology |
Electrical Properties of GaPN Akihiro Wakahara, Yuzo Furukawa, Atsushi Sato, Eri Shimada, Daisuke Minohara, Hiroo Yonezu (toyohashi Univ. of Tech.) |
[more] |
ED2006-31 CPM2006-18 SDM2006-31 pp.61-65 |
ED, CPM, SDM |
2006-05-19 10:15 |
Aichi |
VBL, Toyohashi University of Technology |
InGaPN/GaPN Quantum Well Structures for Si/III-V-N Optoelectronic Integrated Circuits Kazuyuki Umeno, Sung Man Kim, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) |
Direct-transition InGaPN/GaPN quantum well (QW) structures were grown on GaP substrates by RF-MBE at 500ºC for appl... [more] |
ED2006-32 CPM2006-19 SDM2006-32 pp.67-72 |
ED, CPM, SDM |
2006-05-19 10:50 |
Aichi |
VBL, Toyohashi University of Technology |
Fabrication of MOSFETs and LEDs for Si/III-V-N Optoelectronic Integrated Circuits Naruto Ohta, Yuji Morisaki, Soo-Young Moon, Seigi Ishiji, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) |
We fabricated pMOSFETs and LEDs using lattice-matched n-Si/III-V-N layers/p-Si-substrate structures for monolithic optoe... [more] |
ED2006-33 CPM2006-20 SDM2006-33 pp.73-78 |
LQE, PN, OPE, OFT, EMT |
2006-02-02 11:10 |
Hyogo |
Kobe Univ. |
Surface plasmons on a multilayered thin-film grating Toyonori Matsuda, Takashi Nakamura (Kumamoto Nat' College of Tech.), Akihiro Wakahara (Toyohashi Univ. of Tech.), Yoichi Okuno, Michitoshi Ohtsu, Taikei Suyama (Kumamoto Univ.) |
[more] |
PN2005-89 OFT2005-76 OPE2005-137 LQE2005-152 pp.23-28 |
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