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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2011-11-10 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-117 |
A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] |
SDM2011-117 pp.11-15 |
SDM, ICD |
2011-08-26 09:50 |
Toyama |
Toyama kenminkaikan |
Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming throughput Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-85 ICD2011-53 |
A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] |
SDM2011-85 ICD2011-53 pp.75-78 |
ITE-MMS, MRIS |
2009-10-09 10:25 |
Fukuoka |
FUKUOKA traffic center |
[Invited Talk]
Low cost technology of phase change memory with low-contact-resistivity poly-Si selection diode Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) MR2009-26 |
We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] |
MR2009-26 pp.31-35 |
ICD, SDM |
2009-07-17 12:00 |
Tokyo |
Tokyo Institute of Technology |
Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hitoshi Kume, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) SDM2009-112 ICD2009-28 |
We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] |
SDM2009-112 ICD2009-28 pp.79-83 |
SDM |
2007-03-15 13:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories Yuichi Matsui, Kenzo Kurotsuchi, Osamu Tonomura, Takahiro Morikawa, Masaharu Kinoshita, Yoshihisa Fujisaki, Nozomu Matsuzaki, Satoru Hanzawa, Motoyasu Terao, Norikatsu Takaura, Hiroshi Moriya, Tomio Iwasaki (Hitachi), Masahiro Moniwa, Tsuyoshi Koga (Renesas) |
A novel memory cell for phase-change memories (PCMs) that enables low-power operation has been developed. Power (i.e., c... [more] |
SDM2006-254 pp.1-6 |
ICD, ITE-CE |
2006-01-26 10:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Phase Change RAM Operated with 1.5-V CMOS as Low Cost Embedded Memory Satoru Hanzawa, Kenichi Osada, Takayuki Kawahara, Riichiro Takemura (Hitachi CRL), Naoki Kitai (Hitachi ULSI), Norikatsu Takaura, Nozomu Matsuzaki, Kenzo Kurotsuchi (Hitachi CRL), Hiroshi Moriya (Hitachi MERL), Masahiro Moniwa (Renesas) |
This paper describes a phase change (PC) RAM operated at the lowest possible voltage, 1.5 V, with a CMOS memory array, u... [more] |
ICD2005-206 pp.7-12 |
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