Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2023-12-08 09:50 |
Aichi |
WINC AICHI |
Protection Methods of Graphene-Oxide-Semiconductor Electron Emission Sources against Oxidizing Environments and Their Effects on Electron Emission Properties Ren Mutsukawa, Yoshinori Takao (YNU), Masayoshi Nagao, Hiromasa Murata, Katsuhisa Murakami (AIST) ED2023-48 |
Graphene-oxide-semiconductor (GOS) electron emission devices can emit electrons at low voltages, which are expected to b... [more] |
ED2023-48 pp.39-42 |
ED |
2023-12-08 11:15 |
Aichi |
WINC AICHI |
Fabrication Process Optimization for Improving the Performance of Ultra-High Density Electrospray Ion Sources with a Capillary-Needle-Emitter Structure Shujun Guo (YNU), Masayoshi Nagao, Katsuhisa Murakami, Hiromasa Murata (AIST), Yoshinori Takao (YNU) ED2023-51 |
We study electrospray ion sources that can be mounted on nano-satellites, which use ionic liquid as a propellant and gai... [more] |
ED2023-51 pp.49-52 |
ED |
2022-12-08 12:30 |
Aichi |
12/8 Nagoya University, 12/9 WINC AICHI |
Fabrication of a Double-Emitter Structure for Ultra-High Density Electrospray Ion Sources Shujun Guo (YNU), Masayoshi Nagao, Katsuhisa Murakami, Hiromasa Murata (AIST), Yoshinori Takao (YNU) ED2022-49 |
We study electrospray thrusters that can be mounted on nano-satellites. The thrust density of these thrusters is lower t... [more] |
ED2022-49 pp.1-3 |
ED |
2022-12-08 12:55 |
Aichi |
12/8 Nagoya University, 12/9 WINC AICHI |
Electrospray Ion Sources using SU-8 Thick-Film Photoresist for Microspacecraft Takumi Shingu (YNU/AIST), Masayoshi Nagao, Katsuhisa Murakami, Hiromasa Murata (AIST), Yoshinori Takao (YNU) ED2022-50 |
We study electrospray ion sources as high-thrust propulsion for nanosatellites. Previously, we fabricated a high-density... [more] |
ED2022-50 pp.4-7 |
ED |
2021-12-09 14:45 |
Online |
Online |
Oxidation resistant coating of graphene-oxide-semiconductor electron emission device for low earth orbit applications Naoyuki Matsumoto (YNU/AIST), Yoshinori Takao (YNU), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2021-45 |
A graphene-oxide-semiconductor (GOS) planar-type electron source was protected with a hexagonal boron nitride (h-BN) fil... [more] |
ED2021-45 pp.38-42 |
ED |
2019-11-21 15:20 |
Tokyo |
|
Development of mA-Class Planar-Type Electron Sources Based on Graphene-Oxide-Semiconductor Structure for Micro Ion Engines Ryo Furuya (YNU/AIST), Katsuhisa Murakami, Masayoshi Nagao (AIST), Yoshinori Takao (YNU) ED2019-64 |
(To be available after the conference date) [more] |
ED2019-64 pp.21-24 |
ED |
2019-11-21 16:35 |
Tokyo |
|
Fabrication of High-Density Emitter Array and Ion Extraction Experiments for Electrospray Thrusters Kanta Suzuki (YNU/AIST), Naoki Inoue (YNU), Masayoshi Nagao, Katsuhisa Murakami (AIST), Sommawan Khumpuang, Shiro Hara (AIST/MINIMAL), Yoshinori Takao (YNU) ED2019-67 |
(To be available after the conference date) [more] |
ED2019-67 pp.31-34 |
ED |
2017-10-26 13:30 |
Miyagi |
|
High efficiency planar-type electron emission devices using graphene electrode operable in low vacuum pressure and low voltage conditions Katsuhisa Murakami (AIST), Ryo Furuya (Yokohama National Univ.), Takuya Iijima (Univ. Tsukuba), Masayoshi Nagao (AIST), Yoshihiro Nemoto, Masaki Takeguchi (NIMS), Yoshinori Takao (Yokohama National Univ.), Yoichi Yamada, Masahiro Sasaki (Univ. Tsukuba) ED2017-36 |
[more] |
ED2017-36 pp.1-4 |
ED |
2017-10-27 11:15 |
Miyagi |
|
Electrospray micro-thrusters by using fabrication technology of miniature field emitter arrays Katsuhisa Murakami, Masayoshi Nagao (AIST), Naoki Inoue, Yoshinori Takao (YNU), Sommawan Khumpuang, Shiro Hara (AIST/Minimal) ED2017-47 |
[more] |
ED2017-47 pp.47-50 |
SDM |
2013-10-18 11:00 |
Miyagi |
Niche, Tohoku Univ. |
Classical molecular dynamics simulations of plasma-induced physical damage
-- defect generation mechanisms in fin-type MOSFET -- Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2013-95 |
[more] |
SDM2013-95 pp.37-40 |
SDM |
2013-10-18 13:30 |
Miyagi |
Niche, Tohoku Univ. |
Effects of plasma-induced charging damage on random telegraph noise (RTN) behaviors in advanced MOSFETs Masayuki Kamei, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.) SDM2013-97 |
[more] |
SDM2013-97 pp.47-50 |
SDM |
2012-10-25 16:35 |
Miyagi |
Tohoku Univ. (Niche) |
Analysis of Plasma-Induced Si Substrate Damage using Temperature-Controlled Photoreflectance Spectroscopy and Defect Distribution Profiling using Wet Etching Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.) |
Si substrate damage in the source/drain extension regions during plasma etching is a serious issue that causes degradati... [more] |
|
SDM |
2011-10-21 14:00 |
Miyagi |
Tohoku Univ. (Niche) |
[Invited Talk]
Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2011-110 |
We investigated the effects of plasma process-induced physical damage (bombardment of ions) on MOSFET performance degrad... [more] |
SDM2011-110 pp.73-78 |
SDM |
2011-10-21 14:50 |
Miyagi |
Tohoku Univ. (Niche) |
Electrical Characterization Techniques for Si Substrate Damage during Plasma Etching Yoshinori Nakakubo, Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2011-111 |
We present analysis techniques for plasma process-induced damage in the Si substrate. The techniques are based on the el... [more] |
SDM2011-111 pp.79-84 |