Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2021-06-22 16:00 |
Online |
Online |
[Invited Lecture]
For understanding ferroelectric HfO2 toward its device applications Akira Toriumi SDM2021-26 |
[more] |
SDM2021-26 pp.17-20 |
SDM |
2019-06-21 15:45 |
Aichi |
Nagoya Univ. VBL3F |
New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching Takeaki Yajima (Univ. of Tokyo), Yusuke Samata, Tomonori Nishimura, Akira Toriumi (JST) SDM2019-32 |
The characteristics of the VO2-channel Mott transistor is systematically studied. The transfer characteristics shows a c... [more] |
SDM2019-32 pp.35-38 |
SDM |
2019-01-29 09:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2018-81 |
In this paper, we clarified the multidomain dynamics of ferroelectric polarization in the Negative Capacitance Field-Eff... [more] |
SDM2018-81 pp.1-4 |
SDM |
2019-01-29 09:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors Shinji Migita, Hiroyuki Ota (AIST), Akira Thorium (U. Tokyo) SDM2018-82 |
Steep-subthreshold swing (steep-SS) behaviors are observable in recent ferroelectric-gate field-effect transistors (FE-F... [more] |
SDM2018-82 pp.5-8 |
SDM |
2019-01-29 10:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Direct relationship between sub-60 mV/dec subthreshold swing and internal potential instability in MOSFET externally connected to ferroelectric capacitor Li Xiuyan, Akira Toriumi (Univ. of Tokyo) SDM2018-83 |
[more] |
SDM2018-83 pp.9-12 |
SDM |
2018-06-25 16:15 |
Aichi |
Nagoya Univ. VBL3F |
Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field Shinji Migita, Hiroyuki Ota (AIST), Akira Toriumi (Univ. Tokyo) SDM2018-25 |
Ferroelectric HfO2-based thin films are attractive memory materials for application in LSI. These ferroelectrics have la... [more] |
SDM2018-25 pp.43-46 |
SDM |
2018-01-30 11:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Perspective of Negative Capacitance FinFETs Investigated by Transient TCAD Simulation Hiroyuki Ota, Shinji Mgita, Tsutomu Ikegami, Junichi Hattori, Hidehiro Asai, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2017-91 |
[more] |
SDM2017-91 pp.1-4 |
SDM |
2018-01-30 15:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo) SDM2017-96 |
5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indi... [more] |
SDM2017-96 pp.21-24 |
SDM, ICD, ITE-IST [detail] |
2017-08-02 10:50 |
Hokkaido |
Hokkaido-Univ. Multimedia Education Bldg. |
[Invited Talk]
Capacitor-less neuron circuits using metal-insulator transition devices Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2017-44 ICD2017-32 |
The metal-insulator transition of VO2 is exploited in neuromorphic circuits, resulting in a capacitor-less neuron circui... [more] |
SDM2017-44 ICD2017-32 pp.107-108 |
SDM |
2017-01-30 11:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Fully Coupled 3-D Device Simulation of Negative Capacitance FinFETs for Sub 10 nm Integration Hiroyuki Ota, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2016-133 |
Subthreshold operation of negative capacitance FinFETs (NC-FinFETs) at sub 10 nm gate length are analyzed with a newly d... [more] |
SDM2016-133 pp.13-16 |
SDM |
2017-01-30 15:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
General relationship for cation and anion doping effects on ferroelectric HfO2 formation Xu Lun, Shibayama Shigehisa, Izukashi Kazutaka, Nishimura Tomonori, Yajima Takeaki (Univ. of Tokyo), Migita Shinji (AIST), Toriumi Akira (Univ. of Tokyo) SDM2016-137 |
This work discusses the general relationship for cation and anion doping effects on the HfO2 para-/ferroelectric transit... [more] |
SDM2016-137 pp.29-32 |
SDM |
2017-01-30 16:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Novel Functional Passive Element for Future Analogue Signal Processing
-- Fabrication and Application of the VO2 Volatile Switch -- Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2016-138 |
Electronic devices for internet of things (IoT) need to reconcile high functionality with low cost and simplicity. This ... [more] |
SDM2016-138 pp.33-36 |
SDM |
2016-11-10 14:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Free carrier density dependent band gap and phonon frequency in germanium Shoichi Kabuyanagi, Akira Toriumi (The Univ. of Tokyo) SDM2016-82 |
[more] |
SDM2016-82 pp.23-26 |
SDM |
2016-06-29 10:40 |
Tokyo |
Campus Innovation Center Tokyo |
[Invited Lecture]
Design of SOI-FETs for Steep Slope Switching using Negative Capacitance in Ferroelectric Gate Insulators Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2016-34 |
This paper discusses a design of fully depleted silicon-on-insulator field-effect transistors with ferroelectric gate in... [more] |
SDM2016-34 pp.9-13 |
SDM |
2015-01-27 10:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Analytical formulation of interfacial SiO2scavenging in HfO2/SiO2/Si stacks Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2014-135 |
[more] |
SDM2014-135 pp.1-4 |
SDM |
2015-01-27 10:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Dramatic Effects of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage as well as Electron Mobility in n-channel Ge MOSFETs ChoongHyun Lee, Tomonori Nishimura, Cimang Lu, Shoichi Kabuyanagi, Akira Toriumi (Univ. of Tokyo) SDM2014-136 |
[more] |
SDM2014-136 pp.5-8 |
SDM |
2014-11-07 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Interface Engineering for High Mobility Ge MOSFETs: Surface Orientation and Scattering Mechanism ChoongHyun Lee, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2014-107 |
[more] |
SDM2014-107 pp.65-70 |
SDM |
2014-06-19 15:00 |
Aichi |
VBL, Nagoya Univ. |
[Invited Lecture]
Ultra-sharp metal-to-insulator transition in a single crystal VO2 thin film by controlling the local stress of transition Takeaki Yajima, Yuma Ninomiya, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2014-55 |
[more] |
SDM2014-55 pp.65-67 |
SDM |
2014-01-29 09:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Carrier response in band gap and multiband transport in bilayer grapheme under the ultra-high displacement Kosuke Nagashio, K Kanayama, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2013-135 |
[more] |
SDM2013-135 pp.1-4 |
SDM |
2014-01-29 10:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side ChoongHyun Lee, Tomonori Nishimura, T Tabata, Cimang Lu, W F Zhang, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2013-136 |
We clarified wafer-related origins for electron mobility degradation in Ge n-MOSFETs. High-Ns electron mobility was dram... [more] |
SDM2013-136 pp.5-8 |