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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2023-12-07 13:50 |
Aichi | WINC AICHI | Development of planar type electron emission device using graphene/h-BN/Si structure Katsuhisa Murakami, Hiromasa Murata, Masayoshi Nagao (AIST), Masahiro Sasaki, Yoichi Yamada (Univ. Tsukuba)  ED2023-39 |
[more] | ED2023-39 pp.5-7 |
| ED | 2023-12-07 14:15 |
Aichi | WINC AICHI | Effect of multi-reflection in Graphene-Insulator-Semiconductor-structured electron source Takao Koichi, Shogo Kawashima, Satoshi Abo, Fujio Wakaya (Osaka Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2023-40 |
In the graphene-insulator-semiconductor-structured electron source, the characteristics of emitted electron beam could b... [more] | ED2023-40 pp.8-10 |
| ED | 2023-12-07 14:50 |
Aichi | WINC AICHI | Fabrication of Hafnium Nitride Spindt-type Field Emitter Arrays by Triode High Power Pulsed Magnetron Sputtering Shun Kondo (Seikei University/AIST), Takeo Nakano, Md. Suruz Mian (Seikei University), Masayoshi Nagao, Hiromasa Murata (AIST) ED2023-41 |
We have been attempting to fabricate Spindt-type emitter using the triode high-power pulsed magnetron sputtering (t-HPPM... [more] | ED2023-41 pp.11-14 |
| ED | 2023-12-07 15:40 |
Aichi | WINC AICHI | Theorical Argument on Application of an FEA-based Two-Stage Amplifier to Electronic Devices Ryosuke Hori (Kyoto Univ.), Tomoaki Osumi (Kyoto Univ./AIST), Masayoshi Nagao, Hiromasa Murata (AIST), Yasuhito Gotoh (Kyoto Univ.) ED2023-43 |
[more] | ED2023-43 pp.19-22 |
| ED | 2023-12-08 09:50 |
Aichi | WINC AICHI | Protection Methods of Graphene-Oxide-Semiconductor Electron Emission Sources against Oxidizing Environments and Their Effects on Electron Emission Properties Ren Mutsukawa, Yoshinori Takao (YNU), Masayoshi Nagao, Hiromasa Murata, Katsuhisa Murakami (AIST) ED2023-48 |
Graphene-oxide-semiconductor (GOS) electron emission devices can emit electrons at low voltages, which are expected to b... [more] | ED2023-48 pp.39-42 |
| ED | 2023-12-08 10:25 |
Aichi | WINC AICHI | Photo-assisted Electron Emission Properties of Graphene-Oxide-Semiconductor Electron Source Hidetaka Shimawaki (Hachinohe Inst. Technol.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2023-49 |
Planar-type electron sources based on graphene/oxide/semiconductor (GOS) structures have demonstrated excellent performa... [more] | ED2023-49 pp.43-44 |
| ED | 2023-12-08 11:15 |
Aichi | WINC AICHI | Fabrication Process Optimization for Improving the Performance of Ultra-High Density Electrospray Ion Sources with a Capillary-Needle-Emitter Structure Shujun Guo (YNU), Masayoshi Nagao, Katsuhisa Murakami, Hiromasa Murata (AIST), Yoshinori Takao (YNU) ED2023-51 |
We study electrospray ion sources that can be mounted on nano-satellites, which use ionic liquid as a propellant and gai... [more] | ED2023-51 pp.49-52 |
| ED | 2022-12-08 12:30 |
Aichi | 12/8 Nagoya University, 12/9 WINC AICHI | Fabrication of a Double-Emitter Structure for Ultra-High Density Electrospray Ion Sources Shujun Guo (YNU), Masayoshi Nagao, Katsuhisa Murakami, Hiromasa Murata (AIST), Yoshinori Takao (YNU) ED2022-49 |
We study electrospray thrusters that can be mounted on nano-satellites. The thrust density of these thrusters is lower t... [more] | ED2022-49 pp.1-3 |
| ED | 2022-12-08 12:55 |
Aichi | 12/8 Nagoya University, 12/9 WINC AICHI | Electrospray Ion Sources using SU-8 Thick-Film Photoresist for Microspacecraft Takumi Shingu (YNU/AIST), Masayoshi Nagao, Katsuhisa Murakami, Hiromasa Murata (AIST), Yoshinori Takao (YNU) ED2022-50 |
We study electrospray ion sources as high-thrust propulsion for nanosatellites. Previously, we fabricated a high-density... [more] | ED2022-50 pp.4-7 |
| ED | 2022-12-08 14:10 |
Aichi | 12/8 Nagoya University, 12/9 WINC AICHI | Measurement of work function of hafnium nitride thin films prepared by dc and rf magnetron sputtering Tomoaki Osumi (Kyoto Univ.), Masayoshi Nagao (AIST), Yasuhito Gotoh (Kyoto Univ.) ED2022-53 |
Hafnium nitride(HfN) thin films were prepared by dc and rf magnetron sputtering. The nitrogen compositions of HfN thin f... [more] | ED2022-53 pp.15-17 |
| ED | 2022-12-08 16:25 |
Aichi | 12/8 Nagoya University, 12/9 WINC AICHI | Simulation of Electron Transmission through Graphene at GIS Electron Source Fujio Wakaya, Daichi Terakado, Shogo Kawashima, Satoshi Abo (Osaka Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2022-58 |
[more] | ED2022-58 pp.29-30 |
| ED | 2022-12-09 10:15 |
Aichi | 12/8 Nagoya University, 12/9 WINC AICHI | Development of Graphene Planar Electron Source for Operation in Liquid Katsuhisa Murakami, Hiromasa Murata, Masayoshi Nagao (AIST) ED2022-60 |
[more] | ED2022-60 pp.35-36 |
| ED | 2022-12-09 10:40 |
Aichi | 12/8 Nagoya University, 12/9 WINC AICHI | Development of low-temperature synthesis of h-BN on Si substrate and its application to graphene/h-BN/Si stacked planar-type electron emission devices Masaya Yamamoto (Shizuoka Univ./ AIST), Hiromasa Murata, Masayoshi Nagao (AIST), Hidenori Mimura, Yoichiro Neo (Shizuoka Univ.), Katsuhisa Murakami (AIST) ED2022-61 |
[more] | ED2022-61 pp.37-38 |
| ED | 2022-12-09 15:35 |
Aichi | 12/8 Nagoya University, 12/9 WINC AICHI | Electron emission properties of planar-type electron source based on nanocrystalline silicon Hidetaka Shimawaki (Hachinohe Inst. Technol.), Hiromasa Murata, Mashayoshi Nagao, Katsuhisa Murakami (AIST) ED2022-68 |
[more] | ED2022-68 pp.59-61 |
| ED | 2022-12-09 16:25 |
Aichi | 12/8 Nagoya University, 12/9 WINC AICHI | Development of field-emitter-array technology for high current operation Hiromasa Murata, Katsuhisa Murakami, Masayoshi Nagao (AIST) ED2022-70 |
In our previous study, we have developed a volcano-structured double-gate field emitter array (FEA). We have achieved hi... [more] | ED2022-70 pp.64-65 |
| ED | 2021-12-09 14:45 |
Online | Online | Oxidation resistant coating of graphene-oxide-semiconductor electron emission device for low earth orbit applications Naoyuki Matsumoto (YNU/AIST), Yoshinori Takao (YNU), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2021-45 |
A graphene-oxide-semiconductor (GOS) planar-type electron source was protected with a hexagonal boron nitride (h-BN) fil... [more] | ED2021-45 pp.38-42 |
| ED | 2021-12-09 15:35 |
Online | Online | Optimal design of planar type electron gun using graphene gate electrode for microscope Yukino Kameda (Shizuoka Univ. /AIST), Katsuhisa Murakami, Masayoshi Nagao (AIST), Hidenori Mimura, Yoichiro Neo (Shizuoka Univ.) ED2021-47 |
A planar type electron gun using graphene gate electrode can be operated in a low vacuum condition and a low applied vol... [more] | ED2021-47 pp.47-50 |
| ED | 2019-11-21 13:50 |
Tokyo | Fabrication of field emitter array with integral Si ballast resistor Hidetoshi Shinya, Hidekazu Murata, Eiji Rokuta, Hiroshi Shimoyama (Meijo Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2019-61 |
The emission current from field emitter fluctuates due to surface migration and adsorption-desorption of residual gas mo... [more] | ED2019-61 pp.9-12 |
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| ED | 2019-11-21 15:20 |
Tokyo | Development of mA-Class Planar-Type Electron Sources Based on Graphene-Oxide-Semiconductor Structure for Micro Ion Engines Ryo Furuya (YNU/AIST), Katsuhisa Murakami, Masayoshi Nagao (AIST), Yoshinori Takao (YNU) ED2019-64 |
(To be available after the conference date) [more] | ED2019-64 pp.21-24 |
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| ED | 2019-11-21 15:45 |
Tokyo | Volcano structured field emitter array for large current Yuta Nabuchi (AIST/Shizuoka Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST), Hidenori Mimura, Yoichiro Neo (Shizuoka Univ.) ED2019-65 |
We have developed a Volcano-structured double gate Spindt-type field emitter arrays (VDGS-FEA). It can focus the electro... [more] | ED2019-65 pp.25-28 |
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