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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 35  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD, ITE-IST [detail] 2023-08-01
13:00
Hokkaido Hokkaido Univ. Multimedia Education Bldg. 3F
(Primary: On-site, Secondary: Online)
[Invited Talk] R and D of Low Power Semiconductor Technology and It's Application Expansions -- Review R and D of Semiconductor device and LSI for these 43 years --
Koichiro Ishibashi (UEC) SDM2023-38 ICD2023-17
LSI density has been doubling every two years for 64 years, since Moore’s law started in 1959. The presenter began resea... [more] SDM2023-38 ICD2023-17
pp.14-15
MI 2022-09-15
15:00
Kanagawa
(Primary: On-site, Secondary: Online)
Improvement of Bacteria Colony Classification Accuracy by Machine Learning Using Generative Adversarial Networks
Masaki Amano, Duc-Tho Mai, Guanghao Sun (UEC), Nguyen Vu Trung, Le Thi Hoi (HMU), Nguyen Thi Hoa (NLH), Koichiro Ishibashi (UEC) MI2022-61
 [more] MI2022-61
pp.49-52
ICD, SDM, ITE-IST [detail] 2022-08-08
14:15
Online   Evaluation of Steep Subthreshold Slope Device "Dual-gate type PN-body Tied SOI-FET" for Ultra-low Voltage Operation
Haruki Yonezaki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) SDM2022-38 ICD2022-6
In this study, we report the first prototype results of a Steep SS "Dual-Gate (DG) PN-Body Tied (PNBT) SOI-FET" for extr... [more] SDM2022-38 ICD2022-6
pp.17-20
MBE, NC
(Joint)
2020-12-18
13:50
Online Online Highly Reliable Screening System for Infectious Diseases using Contact-less Medical Radar and Data Quality Assessment Machine Learning
Koki Kumagai, Koichiro Ishibashi, Guanghao Sun (UEC) MBE2020-21
A quarantine based on body temperature has been carried out to prevent the spread of infectious diseases. However, body ... [more] MBE2020-21
pp.8-11
ICD, SDM, ITE-IST [detail] 2020-08-07
11:00
Online Online CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET”
Shota Ishiguro, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) SDM2020-8 ICD2020-8
In this study, we report the CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” proposed in our l... [more] SDM2020-8 ICD2020-8
pp.37-40
VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2019-11-15
16:35
Ehime Ehime Prefecture Gender Equality Center A Study on DCDC Converter for RF Energy Harvesting Applications
Munkhzul Munkhtsog, Koichiro Ishibashi (UEC) ICD2019-43 IE2019-49
RF Energy Harvesting can collect small amounts of ambient energy to power wireless devices and it can be used anywhere, ... [more] ICD2019-43 IE2019-49
pp.71-74
SDM, ICD, ITE-IST [detail] 2019-08-09
14:10
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and Effect of Vsub and Positive Charge in Buried Oxide on Super Steep SS “PN Body-Tied SOI-FET”
Wataru Yabuki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2019-51 ICD2019-16
In this study, We report the effect of the substrate bias (Vsub) and the positive charge (Qox) in the buried oxide (BOX)... [more] SDM2019-51 ICD2019-16
pp.89-93
ASN 2019-01-29
10:25
Kagoshima Kyuukamura Ibusuki Illumination Beat Sensor with 1 chip boost circuit for general solar cells
Kosuke Suzuki, Koichiro Ishibashi (UEC) ASN2018-88
 [more] ASN2018-88
pp.53-57
SDM 2018-11-09
15:55
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-76
In order to utilize the Radio Frequency (RF) signal power existing in the living environment, a RF rectifier that realiz... [more] SDM2018-76
pp.59-64
SDM, ICD, ITE-IST [detail] 2018-08-07
10:45
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Talk] Energy Harvesting Beat Sensors and Potential Applications -- Realization of Low Power, Low Cost, and High Accuracy IoT Sensors --
Koichiro Ishibashi (UEC) SDM2018-27 ICD2018-14
We have proposed Beat Sensors as new concept of IoT sensors. The Beat Sensor transmits ID codes, the interval time of wh... [more] SDM2018-27 ICD2018-14
pp.11-14
SDM, ICD, ITE-IST [detail] 2018-08-07
14:25
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET"
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-31 ICD2018-18
In order to construct a rectifier that function with µW power, it is necessary to develop a new diode technology. The co... [more] SDM2018-31 ICD2018-18
pp.31-34
MW
(2nd)
2018-06-27
- 2018-06-29
Overseas KMITL, Bangkok, Thailand Rectification of Small Voltage Signal by Super Steep Subthreshold Slope "PN-Body Tied SOI FET" for RF Energy Harvesting
Takuya Yamada, Jiro Ida, Takayuki Mori, Shun Momose, Yasunori Tsuchiya, Kenji Itoh (KIT), Koichiro Ishibashi (UEC)
Rectification of the small voltage signal was experimentally confirmed, for the first time, by our new device of the sup... [more]
ASN 2018-01-30
11:15
Oita Yufugo-kan (Oita) Energy Harvesting Beat Sensors and Their Characteristics -- Realization of Low Cost, Small Size, and High Accuracy IoT Sensors --
Koichiro Ishibashi, Ryohei Takitoge (UEC) ASN2017-86
 [more] ASN2017-86
pp.19-22
ASN 2018-01-31
12:20
Oita Yufugo-kan (Oita) [Poster Presentation] Nano wattage ambient temperature sensor circuit for energy harvesting sensor network
Shinya Nii, Koichiro Ishibashi (UEC) ASN2017-104
In this paper, we propose a nano watt ambient temperature sensor circuit for an energy harvesting sensor network which m... [more] ASN2017-104
pp.121-126
SDM, ICD, ITE-IST [detail] 2017-08-02
11:35
Hokkaido Hokkaido-Univ. Multimedia Education Bldg. Gate Controlled Diode Characteristics of Super Steep Subthreshold slope PN-Body Tied SOI-FET for high Efficiency RF Energy Harvesting
Shun Momose, Jiro Ida, Takayuki Mori, Takahiro Yoshida, Junpei Iwata, Takashi Horii, Takahiro Furuta, Takuya Yamada, Daichi Takamatsu, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2017-45 ICD2017-33
The gate controlled diode characteristics with our newly super steep subthreshold slope (SS) “PN-Bode Tied SOI FET” was ... [more] SDM2017-45 ICD2017-33
pp.109-114
SR 2017-01-20
10:15
Ehime Himegin Hall A study on low-power sensor node using synchronous MAC protocol
Shohei Ishigaki, Koichiro Ishibashi (UEC) SR2016-86
 [more] SR2016-86
pp.45-52
SDM 2016-10-26
15:30
Miyagi Niche, Tohoku Univ. [Invited Talk] Back-Bias Control Technique for Suppression of Die-to-Die Delay Variability of SOTB CMOS Circuits at Ultralow-Voltage (0.4 V) Operation
Hideki Makiyama, Yoshiki Yamamoto, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Hiroki Shinkawata, Shiro Kamohara, Yasuo Yamaguchi (Renesas Electronics Corp.), Nobuyuki Sugii (Hitach), Koichiro Ishibashi (The Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (The Univ. of Tokyo) SDM2016-71
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] SDM2016-71
pp.15-20
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2015-12-02
16:45
Nagasaki Nagasaki Kinro Fukushi Kaikan An implementation and preliminary evaluation of a dynamic body bias control scheme for a low power micro controller using SOTB MOSFET
Hayate Okuhara (Keio Univ.), Tomoaki Koide (UEC), Johannes maximilian kuehn, Akram Ben Ahmed (Keio Univ.), Koichiro Ishibashi (UEC), Hideharu Amano (Keio Univ.) CPSY2015-71
 [more] CPSY2015-71
pp.57-62
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2015-12-02
17:10
Nagasaki Nagasaki Kinro Fukushi Kaikan The adaptive body bias generator for achieving the ultra-low power operation of the logic circuit
Tomoaki Koide, Kouichirou Ishibashi (UEC), Nobuyuki Sugi (LEAP) CPM2015-134 ICD2015-59
The leakage has been increasing by miniaturization of the transistor in recently year. Adaptive body bias generator with... [more] CPM2015-134 ICD2015-59
pp.39-43
SDM 2014-10-17
14:30
Miyagi Niche, Tohoku Univ. [Invited Talk] Back-Bias Control technique for Suppression of Die-to-Die Delay Variability of SOTB MOS Circuits at Ultralow-Voltage (0.4 V) Operation
Hideki Makiyama, Yoshiki Yamamoto, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Yasuo Yamaguchi (LEAP), Koichiro Ishibashi (Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo) SDM2014-94
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] SDM2014-94
pp.61-68
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