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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2013-06-18 09:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-46 |
Currently, it is reported that the Ge surface oxidation through the thin Al2O3 layer using oxygen plasma (post plasma ox... [more] |
SDM2013-46 pp.13-18 |
SDM |
2012-06-21 10:55 |
Aichi |
VBL, Nagoya Univ. |
Clarification of Interfacial Reaction Mechanism in O2 Annealing or O radical Process for Al2O3/Ge Structure Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-48 |
To realize a high performance Ge MOSFET, it is quite important to achieve simultaneously the low interface state density... [more] |
SDM2012-48 pp.27-32 |
SDM |
2012-06-21 11:35 |
Aichi |
VBL, Nagoya Univ. |
Effect of Reducing Character of Gate Metals on Pr Valence State in Pr Oxide Film on Ge Substrate Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-50 |
We have investigated the impact of the gate metal on the chemical bonding state in the metal/Pr-oxide/Ge gate stack stru... [more] |
SDM2012-50 pp.37-42 |
SDM |
2009-06-19 11:20 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Electrical Properties of Ge MIS Interface Defects Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota (MIRAI-NIRC), Shinichi Takagi (MIRAI-NIRC/Univ. of Tokyo) SDM2009-30 |
The response of majority and minority carriers with interface traps have been systematically investigated for Ge MIS int... [more] |
SDM2009-30 pp.21-26 |
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