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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, CPM, ED 2017-12-01
12:55		 Aichi Nagoya Inst. tech. Improvement of PBTI reliability in GaN-MOSFETs
Yosuke Kajiwara, Toshiya Yonehara, Daimotsu Kato, Kenjiro Uesugi, Aya Shindome, Masahiko Kuraguchi, Akira Mukai, Hiroshi Ono, Miki Yumoto, Akira Yoshioka, Shinya Nunoue (Toshiba) ED2017-62 CPM2017-105 LQE2017-75		  [more] ED2017-62 CPM2017-105 LQE2017-75
pp.65-68
ED 2009-06-11
16:50		 Tokyo   A study on low damage dry etching for AlGaN/GaN-HEMT
Masahiko Kuraguchi, Miki Yumoto, Yoshiharu Takada, Kunio Tsuda (Toshiba Corp.) ED2009-43		 Recessed gate structure is promising to improve GaN electric devices. Low damage dry etching technique is required to fo... [more] ED2009-43
pp.37-40
ED, SDM 2006-01-27
10:30		 Hokkaido Hokkaido Univ. Study on switching characteristics of quantum wire transistors and single electron transistors controlled by Schottky wrap gate for ultra-low power quantum nano integrated logic circuits
Seiya Kasai, Miki Yumoto, Hideki Hasegawa (Hokkaido Univ.) 		To confirm the ultra-low power consumption capability of quantum nano integrated logic circuits, such as nanoprocessors,... [more] ED2005-234 SDM2005-246
pp.15-20
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