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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2022-06-21
13:00		 Aichi Nagoya Univ. VBL3F [Invited Talk] Superiority of counter-doped MOSFET from the viewpoint of oxide/4H-SiC interface property
Shigehisa Shibayama, Takuma Doi, Mitsuo Sakashita, Noriyuki Taoka (Nagoya Univ.), Mitsuaki Shimizu (AIST), Osamu Nakatsuka (Nagoya Univ.) SDM2022-24		 To decrease channel resistance of 4H-SiC power MOSFET, there are two important approaches; (1) reducing the interface st... [more] SDM2022-24
pp.1-4
SDM 2018-06-25
11:20		 Aichi Nagoya Univ. VBL3F Comparative study of SiO2/GaN interface structures and properties between Ar and He as a mixture gas with oxygen for remote plasma chemical vapor deposition
Nguyen Xuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST-NU GaN-OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST-NU GaN-OIL), Mitsuhisa Ikeda, Makihara Katsunori (Nagoya Univ.), Mitsuaki Shimizu (AIST-NU GaN-OIL), Seiichi Miyazaki (Nagoya Univ.) SDM2018-17		  [more] SDM2018-17
pp.5-9
SDM 2018-06-25
11:40		 Aichi Nagoya Univ. VBL3F Control of SiO2/GaN Interface for High-performance GaN MOSFET
Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2018-18		 A high-quality gate insulator together with low interface states is indispensable for GaN-based power MOSFETs. We have r... [more] SDM2018-18
pp.11-14
SDM 2018-06-25
15:15		 Aichi Nagoya Univ. VBL3F Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD
Ryohei Matsuda, Akio Ohta (Nagoya Univ.), Noriyuki Taoka (AIST), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST), Seiichi Miyazaki (Nagoya Univ.) SDM2018-22		 A ~6.2 nm-thick SiO2 was deposited on n-type GaN(0001) by the remote O2 plasma enhanced CVD, and chemical bonding featur... [more] SDM2018-22
pp.29-32
LQE, CPM, ED 2017-12-01
12:30		 Aichi Nagoya Inst. tech. Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures
NguyenXuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST GaN OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST GaN OIL), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST GaN OIL), Seiichi Miyazaki (Nagoya Univ.) ED2017-61 CPM2017-104 LQE2017-74		 Impacts of post-deposition annealing (PDA) on interface properties in a SiO2/GaN structure formed by a remote oxygen pla... [more] ED2017-61 CPM2017-104 LQE2017-74
pp.61-64
SDM 2017-11-09
15:40		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] GaN MOS capacitance simulation considering deep traps
Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu (AIST), Tamotsu Hashizume (Hokkaido Univ.) SDM2017-66		 Transient mode device simulation is applied to obtain capacitances of GaN MOS capacitors including deep level traps, and... [more] SDM2017-66
pp.27-32
CPM, LQE, ED 2013-11-29
16:40		 Osaka   Evaluation of unwanted radiated emission from GaN-HEMT switching circuit
Toshihide Ide, Ryousaku Kaji, Mitsuaki Shimizu (AIST), Kenji Mizutani, Hiroaki Ueno, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2013-89 CPM2013-148 LQE2013-124		 The radiated emission from the GaN-HEMT switching converter is investigated by two-dimensional electromagnetic-probe sca... [more] ED2013-89 CPM2013-148 LQE2013-124
pp.117-120
LQE, ED, CPM 2011-11-17
16:05		 Kyoto Katsura Hall，Kyoto Univ. High-accuracy equivalent-circuit-model for GaN-GIT bi-directional switch
Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen (AIST), Tatsuo Morita, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2011-84 CPM2011-133 LQE2011-107		 GaN-Gate Injection Transistor(GIT) Bi-directional Switches (BDSWs) is capable of the low on-resistance operation as comp... [more] ED2011-84 CPM2011-133 LQE2011-107
pp.55-60
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