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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 34 of 34 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2016-12-13
08:40
Kyoto Kyoto University Enhancement of Optical Gain by Controlling Waveguide Modes in Semipolar InGaN Quantum Well Laser Diodes
Keigo Matsuura, Shigeta Sakai, Atsushi A. Yamaguchi (KIT) ED2016-67 CPM2016-100 LQE2016-83
In order to realize low-cost high-performance green semiconductor laser diodes (LDs), we proposed semipolar InGaN quantu... [more] ED2016-67 CPM2016-100 LQE2016-83
pp.51-54
SCE 2016-08-08
14:15
Saitama Saitama Univ. (Omiya sonic city) Performance evaluation of TES microcalorimeter for Nuclear Clock
Keisei Maehisa, Tasuku Hayashi, Haruka Muramatsu, Kazuhisa Mitsuda, Noriko Yamasaki (JAXA), Atsushi Yamaguchi (RIKEN), Kyousuke Maehata (Kyushu Univ.) SCE2016-19
(To be available after the conference date) [more] SCE2016-19
pp.37-39
LQE 2015-12-18
09:50
Tokyo   Electromagnetic-field analysis simulation for the improvement of light extraction efficiency in III-nitride LEDs
Satoshi Ozaki, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Hiroki Goto, Akira Usui (Furukawa Co., Ltd.) LQE2015-123
The efficiency droop phenomenon is a big problem for high-brightness white LEDs. It has been pointed out that the proble... [more] LQE2015-123
pp.1-4
ED, LQE, CPM 2015-11-26
15:30
Osaka Osaka City University Media Center Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements
Kohei Kawakami, Takashi Nakano, Atsushi A Yamaguchi (KIT) ED2015-77 CPM2015-112 LQE2015-109
Radiative and non-radiative recombination lifetimes in III-nitride semiconductors are usually estimated from time-resolv... [more] ED2015-77 CPM2015-112 LQE2015-109
pp.49-52
ED, LQE, CPM 2015-11-26
15:55
Osaka Osaka City University Media Center Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals
Takashi Nakano, Kouhei Kawakami, Atsushi A. Yamaguchi (KIT) ED2015-78 CPM2015-113 LQE2015-110
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity b... [more] ED2015-78 CPM2015-113 LQE2015-110
pp.53-58
LQE, ED, CPM 2014-11-27
13:15
Osaka   Emission characteristics of InGaN-MQW structures on m-plane GaN substrates
Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical), Atsushi Yamaguchi (Kanazawa Inst. of Tech.) ED2014-77 CPM2014-134 LQE2014-105
We have investigated the optical characteristics of InGaN QWs on m-plane GaN substrates in order to understand the reaso... [more] ED2014-77 CPM2014-134 LQE2014-105
pp.19-22
LQE, ED, CPM 2014-11-27
13:40
Osaka   Optical Polarization Properties in non-c-oriented-InGaN Quantum Wells
Shigeta Sakai, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical) ED2014-78 CPM2014-135 LQE2014-106
Optical polarization properties are very important factors for structural design of optoelectronic device using non- c-o... [more] ED2014-78 CPM2014-135 LQE2014-106
pp.23-26
LQE, ED, CPM 2014-11-27
14:30
Osaka   Two-Dimensional Strain Mapping of GaN Templates Fabricated by Nano-Channel FIELO Method Using Nanoimprint Lithography
Masanori Nambu, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Hiroki Goto, Haruo Sunakawa, Toshiharu Matsueda (Furukawa Co. Ltd.), Akiko Okada (Waseda Univ.), Hidetoshi Shinohara, Hiroshi Goto (Toshiba Machine Co. Ltd.), Jun Mizuno (Waseda Univ.), Akira Usui (Furukawa Co. Ltd.) ED2014-80 CPM2014-137 LQE2014-108
The efficiency droop phenomenon is a big problem for high-brightness white LEDs. It has been pointed out that the proble... [more] ED2014-80 CPM2014-137 LQE2014-108
pp.33-38
US 2013-11-11
13:00
Ishikawa Kanazawa Inst. Tech. Research of ultrasonics generated by interaction between laser and material
Yoshiaki Tokunaga, Haruki Fukada, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Akiyuki Minamide (KTC) US2013-53
We report on the ultrasonic waves are generated by using the interaction with lasers and materials. When a beam of He-Ne... [more] US2013-53
pp.1-4
ED 2013-04-18
15:55
Miyagi   [Invited Talk] Study of High Quality GaN Template by Nano-channel FIELO Using UV Nanoimprint
Jun Mizuno, Akiko Okada, Shuichi Shoji (Waseda Univ.), Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Hiroki Goto, Haruo Sunakawa, Toshiharu Matsueda (Furukawa), Hidetoshi Shinohara, Hiromi Nishihara, Hiroshi Goto (Toshiba Machine), Akira Usui (Furukawa) ED2013-8
Nano-channel FIELO (facet-initiated lateral overgrowth) using UV nanoimprint has been proposed. The etch pit density mea... [more] ED2013-8
pp.27-29
LQE, ED, CPM 2011-11-18
10:20
Kyoto Katsura Hall,Kyoto Univ. 2D-mapping measurement of residual strain in GaN substrates by micro-reflectance spectroscopy
Atsushi Yamaguchi (Kanazawa Inst. Tech.), H. Y. Geng, Haruo Sunakawa, Y. Ishihara, Toshiharu Matsueda, Akira Usui (Furukawa) ED2011-90 CPM2011-139 LQE2011-113
We have developed a novel method to precisely measure very small residual strains (~0.01%) in GaN substrates with micron... [more] ED2011-90 CPM2011-139 LQE2011-113
pp.87-91
CPM, LQE, ED 2010-11-11
14:30
Osaka   A Comprehensive Understanding of Previously-Reported Polarization Properties in Nonpolar and Semipolar InGaN Quantum Wells
Atsushi Yamaguchi (Kanazawa Inst. Tech.), Kazunobu Kojima (Kyoto Univ.) ED2010-148 CPM2010-114 LQE2010-104
A new method to obtain material parameters inversely from measured polarization properties has been developed, and we an... [more] ED2010-148 CPM2010-114 LQE2010-104
pp.29-32
LQE, ED, CPM 2008-11-28
10:15
Aichi Nagoya Institute of Technology Theroretical Calculations of Polarization Properties in InGaN Quantum Wells on Non-C (Al)InGaN Alloy Substrates
Atsushi Yamaguchi (Kanazawa Inst. of Technology) ED2008-172 CPM2008-121 LQE2008-116
Polarization properties in InGaN quantum wells on non-C AlInGaN alloy substrates are theoretically investigated. It is s... [more] ED2008-172 CPM2008-121 LQE2008-116
pp.97-102
CPM, ED, LQE 2007-10-11
13:05
Fukui Fukui Univ. Polarization Properties in III-nitride Quantum Wells with Various Substrate Orientations
Atsushi Yamaguchi (Kanazawa Inst. of Technology) ED2007-156 CPM2007-82 LQE2007-57
Polarization properties in III-nitride quantum wells with various substrate orientations have been investigated theoreti... [more] ED2007-156 CPM2007-82 LQE2007-57
pp.1-6
 Results 21 - 34 of 34 [Previous]  /   
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