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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-12-01 09:30 |
Shizuoka | Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurements in InGaN quantum wells by utilizing Helmholtz resonance and increasing the air pressure inside the photoacoustic cell Hiroki Tosa, Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.)  ED2023-24 CPM2023-66 LQE2023-64 |
[more] | ED2023-24 CPM2023-66 LQE2023-64 pp.48-51 |
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| LQE, ED, CPM | 2023-12-01 09:55 |
Shizuoka | Simultaneous microscopic PA/PL line-scan measurements in InGaN-quantum wells on a stripe-core GaN Substrate Syoki Jinno, Atsushi A. Yamaguchi, Keito Mori-Tamamura (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Shigetaka Tomiya, Yoshihiro Kudo (Sony Semiconductor Solutions Corp.) ED2023-25 CPM2023-67 LQE2023-65 |
Accurate measurement of internal quantum efficiency (IQE) is necessary for a comprehensive understanding of the electron... [more] | ED2023-25 CPM2023-67 LQE2023-65 pp.52-55 |
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| LQE, ED, CPM | 2023-12-01 10:20 |
Shizuoka | Polarization control of surface emission from c-plane InGaN quantum wells and determination of deformation potential in InGaN alloy materials Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech), Tomohiro Makino, Maho Ohara, Tatsushi Hamaguchi, Rintaro Koda (Sony Semiconductor Solutions) ED2023-26 CPM2023-68 LQE2023-66 |
InGaN-quantum-well (QW) based vertical-cavity surface-emitting lasers (VCSELs), which are usually fabricated on the c-pl... [more] | ED2023-26 CPM2023-68 LQE2023-66 pp.56-59 |
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| CPM, ED, LQE | 2022-11-25 10:35 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
[Encouragement Talk]
Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations Keito Mori-Tamamura, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2022-40 CPM2022-65 LQE2022-73 |
The carrier dynamics in active layers of III-nitride-based optical devices, has not been fully understood, yet. We belie... [more] | ED2022-40 CPM2022-65 LQE2022-73 pp.73-76 |
| ED, CPM, LQE | 2021-11-25 13:30 |
Online | Online | Indium Composition Dependence of Internal Quantum Efficiency in InGaN Quantum-Wells Measured by Simultaneous Microscopic Photoacoustic and Photoluminescence Spectroscopy Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.) ED2021-20 CPM2021-54 LQE2021-32 |
Accurate estimation of internal quantum efficiency (IQE) is necessary for comprehensive understanding of the carrier dyn... [more] | ED2021-20 CPM2021-54 LQE2021-32 pp.29-32 |
| ED, CPM, LQE | 2021-11-25 13:55 |
Online | Online | Waveguide loss measurements in III-nitride laser structures Kenta Ogasawara (KIT), Shigeta Sakai, Tadashi Okumura, Koichi Naniwae (Ushio Inc), Atsushi A. Yamaguchi (KIT) ED2021-21 CPM2021-55 LQE2021-33 |
InGaN is a semiconductor alloy material made of a mix of InN and GaN. InGaN can emit entire visible light by changing th... [more] | ED2021-21 CPM2021-55 LQE2021-33 pp.33-36 |
| ED, CPM, LQE | 2021-11-25 14:35 |
Online | Online | Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy Hiroto Imashiro, Ryo Yamahida, Hironao Kanamori, Ryuichi Watanabe (KIT), Takeshi Kimura, Taichiro Konno, Hajime Fujikura (SCIOCS), Atsushi A. Yamaguchi (KIT) ED2021-22 CPM2021-56 LQE2021-34 |
The fundamental material properties of GaN and its related materials have not been fully understood. One of the reasons ... [more] | ED2021-22 CPM2021-56 LQE2021-34 pp.37-40 |
| ED, CPM, LQE | 2021-11-25 15:00 |
Online | Online | Theoretical modeling of temperature-dependent PL spectra in InGaN quantum wells Shunya Hakamata, Takashi Fujita, Ryuichi Watanabe, Atsushi A Yamaguchi (KIT) ED2021-23 CPM2021-57 LQE2021-35 |
InGaN quantum-well (QW) light-emitting devices can cover the entire visible spectrum in principle, by changing the In co... [more] | ED2021-23 CPM2021-57 LQE2021-35 pp.41-44 |
| LQE, CPM, ED | 2020-11-26 10:05 |
Online | Online | Internal and External Quantum Efficiency in InGaN Quantum Wells Estimated by Simultaneous Photoacoustic and Photoluminescence Method and Integrating-Sphere Method Keito Mori, Yuchi Takahashi, Shigeta Sakai, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2020-1 CPM2020-22 LQE2020-52 |
In our previous reports, we proposed photoacoustic (PA) and photoluminescence (PL) simultaneous measurements as a method... [more] | ED2020-1 CPM2020-22 LQE2020-52 pp.1-4 |
| LQE, CPM, ED | 2020-11-26 10:25 |
Online | Online | Excitation wavelength dependence of temperature-induced photoluminescence quenching in InGaN quantum wells Takumi Yamaguchi, Kyosuke Ariga, Keito Mori, Atushi A. Yamaguchi (KIT) ED2020-2 CPM2020-23 LQE2020-53 |
Internal quantum efficiency in III-nitride semiconductor light emitting layers is usually estimated from the experimenta... [more] | ED2020-2 CPM2020-23 LQE2020-53 pp.5-8 |
| CPM, LQE, ED | 2019-11-22 14:00 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Theoretical and Experimental Studies on Estimation Methods of Mobility Edge in InGaN Quantum Wells Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2019-56 CPM2019-75 LQE2019-99 |
InGaN is a mixed crystal of InN and GaN. Entire visible light range can be covered by changing their composition. Since ... [more] | ED2019-56 CPM2019-75 LQE2019-99 pp.97-100 |
| CPM, LQE, ED | 2019-11-22 14:20 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Estimation of Internal Quantum Efficiency in Various InGaN Single Quantum Wells with Different Qualities by Simultaneous Photoacoustic and Photoluminescence Measurements Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (SONY) ED2019-57 CPM2019-76 LQE2019-100 |
In order to comprehensively understand the optical properties of nitride semiconductors, we believe accurate measurement... [more] | ED2019-57 CPM2019-76 LQE2019-100 pp.101-106 |
| ED, LQE, CPM | 2018-11-30 13:05 |
Aichi | Nagoya Inst. tech. | Theoretical and Experimental Studies on Potential Fluctuation in InGaN Quantum-Well Structures Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2018-48 CPM2018-82 LQE2018-102 |
The bandgap energy of InGaN alloy materials can be controlled by changing their alloy composition. Since the composition... [more] | ED2018-48 CPM2018-82 LQE2018-102 pp.75-78 |
| ED, LQE, CPM | 2018-11-30 13:30 |
Aichi | Nagoya Inst. tech. | A new method to evaluate the degree of potential fluctuation in InGaN quantum-well laser diodes by optical-pump stimulated-emission measurements Itsuki Oshima, Yuma Ikeda, Shigeta Sakai, A. A. Yamaguchi (Kanazawa Inst. tec.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2018-49 CPM2018-83 LQE2018-103 |
It is well-known that the characteristics of InGaN quantum-well (QW) laser diodes are strongly affected by the potential... [more] | ED2018-49 CPM2018-83 LQE2018-103 pp.79-82 |
| EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] | 2018-01-26 09:30 |
Shizuoka | Shizuoka Univ., Hamamatsu | Evaluation of photoluminescence and photoacoustic characteristics in Bi-activated oxide phosphors Kosuke Sakuma, Yuta Shimooki, Yuki Yoshimoto, Shota Yokka, Haruki Fukada, Athushi A Yamaguchi (Kanazawa Inst. of Tech.) EID2017-40 |
(To be available after the conference date) [more] | EID2017-40 pp.61-64 |
| EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] | 2018-01-26 09:40 |
Shizuoka | Shizuoka Univ., Hamamatsu | Luminescent properties in ZnO thin films prepared by mist-CVD method Katsuya Nakada, Takeshi Kanno, Yoshiki Saito, Shogo Saeki, Satoshi Yamaji, Haruki Fukada, Atsushi Yamaguchi (KIT) |
[more] | |
| LQE, CPM, ED | 2017-11-30 13:35 |
Aichi | Nagoya Inst. tech. | A novel method to measure absolute internal quantum efficiency in InGaN quantum wells by simultaneous photo-acoustic and photoluminescence spectroscopy Naoto Shimizu, Yuchi Takahashi, Genki Kobayashi, Takashi Nakano, Shigeta Sakai, Atsusi A. Yamaguchi (Kanazawa Inst. of Tech.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2017-49 CPM2017-92 LQE2017-62 |
[more] | ED2017-49 CPM2017-92 LQE2017-62 pp.1-6 |
| LQE, CPM, ED | 2017-11-30 14:00 |
Aichi | Nagoya Inst. tech. | Model Analysis of I-V and Photoluminescence Characteristics under Photo-Excitation in InGaN LEDs Yusuke Ota, Shigeta Sakai, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.) ED2017-50 CPM2017-93 LQE2017-63 |
Current-voltage characteristics under photo-excitation in nitride-based LEDs have been measured to investigate the elect... [more] | ED2017-50 CPM2017-93 LQE2017-63 pp.7-10 |
| LQE, CPM, ED | 2017-11-30 14:25 |
Aichi | Nagoya Inst. tech. | Detailed analysis of S-shaped temperature dependence of photoluminescence peak energy in InGaN quantum wells Yuma Ikeda, Shigeta Sakai, Itsuki Oshima, Atsushi A. Yamaguchi (Kanazawa Inst. of Tehc.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2017-51 CPM2017-94 LQE2017-64 |
Analysis of S-shaped temperature dependence of PL peak energy is widely used to evaluate the degree of compositional flu... [more] | ED2017-51 CPM2017-94 LQE2017-64 pp.11-14 |
| LQE | 2016-12-16 11:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Memorial Lecture]
Determination of internal quantum efficiency and recombination lifetime by simultaneous photo-acoustic and photoluminescence measurements in GaN Kohei Kawakami, Takashi Nakano, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.) LQE2016-99 |
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity b... [more] | LQE2016-99 pp.15-20 |
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