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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 40 of 61 [Previous]  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, CPSY, CAS 2017-12-14
15:10
Okinawa Art Hotel Ishigakijima Accelerated Transient Analysis of Power MOSFETs by the Matrix Exponential Method
Tatsuya Kamei, Shigetaka Kumashiro, Kazutoshi Kobayashi (KIT) CAS2017-87 ICD2017-75 CPSY2017-84
In designing and developing power devices, reduction of simulation time is required. In this study, an accurate metric f... [more] CAS2017-87 ICD2017-75 CPSY2017-84
pp.107-112
SDM 2017-11-10
14:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] An Accurate Metric to Control Time Step of Transient Device Simulation by Matrix Exponential Method
Shigetaka Kumashiro, Tatsuya Kamei, Akira Hiroki, Kazutoshi Kobayashi (KIT) SDM2017-70
An accurate metric for the time step control in the power device transient simulation is proposed. This metric contains ... [more] SDM2017-70
pp.47-52
VLD, DC, CPSY, RECONF, CPM, ICD, IE
(Joint) [detail]
2016-11-28
14:15
Osaka Ritsumeikan University, Osaka Ibaraki Campus Evaluation of Radiation-Hard Circuit Structures in a FDSOI Process by TCAD Simulations
Kodai Yamada, Haruki Maruoka, Shigehiro Umehara, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2016-49 DC2016-43
According to the Moore's law, LSIs are miniaturized and the
reliability of LSIs is degraded. To improve the tolerance ... [more]
VLD2016-49 DC2016-43
pp.31-36
VLD, DC, CPSY, RECONF, CPM, ICD, IE
(Joint) [detail]
2016-11-28
14:40
Osaka Ritsumeikan University, Osaka Ibaraki Campus Evaluation of Soft Error Hardness of FinFET and FDSOI Processes by the PHITS-TCAD Simulation System
Shigehiro Umehara, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2016-50 DC2016-44
The impact of soft errors has been serious with process scaling of integrated circuits. Simulation methods for soft erro... [more] VLD2016-50 DC2016-44
pp.37-41
VLD, DC, CPSY, RECONF, CPM, ICD, IE
(Joint) [detail]
2016-11-28
15:05
Osaka Ritsumeikan University, Osaka Ibaraki Campus Evaluation of Soft Error Rates of FlipFlops on FDSOI by Heavy Ions
Masashi Hifumi, Shigehiro Umehara, Haruki Maruoka, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2016-51 DC2016-45
We evaluate tolerance for soft errors of FFs on a 28/65 nm FDSOI. We fabricated three different layouts of non-redundant... [more] VLD2016-51 DC2016-45
pp.43-48
VLD, DC, CPSY, RECONF, CPM, ICD, IE
(Joint) [detail]
2016-11-28
15:30
Osaka Ritsumeikan University, Osaka Ibaraki Campus Circuit Simulation Method Using Bimodal Defect-Centric Model of Random Telegraph Noise on 40 nm SiON Process
Michitarou Yabuuchi, Azusa Oshima, Takuya Komawaki, Kazutoshi Kobayashi, Ryo Kishida, Jun Furuta (KIT), Pieter Weckx (KUL/IMEC), Ben Kaczer (IMEC), Takashi Matsumoto (Univ. of Tokyo), Hidetoshi Onodera (Kyoto Univ.) VLD2016-52 DC2016-46
We propose a circuit analysis method using the bimodal RTN (random telegraph
noise) model of the defect-centric distri... [more]
VLD2016-52 DC2016-46
pp.49-54
ICD, CPSY 2015-12-17
09:40
Kyoto Kyoto Institute of Technology RTN Modeling of Ring Oscillators by a Bimodal Defect-Centric Behavior in a 40 nm process
Azusa Oshima (KIT), Pieter Weckx, Ben Kaczer (IMEC), Takashi Matsumoto (UT), Kazutoshi Kobayash (KIT), Hidetoshi Onodera (KU) ICD2015-63 CPSY2015-76
 [more] ICD2015-63 CPSY2015-76
pp.1-6
ICD, CPSY 2015-12-17
16:00
Kyoto Kyoto Institute of Technology [Poster Presentation] RTN Modeling of Ring Oscillators by a Bimodal Defect-Centric Behavior in a 40 nm process
Azusa Oshima (KIT), Pieter Weckx, Ben Kaczer (IMEC), Takashi Matsumoto (UT), Kazutoshi Kobayashi (KIT), Hidetoshi Onodera (KU)
 [more]
ICD, CPSY 2015-12-18
09:00
Kyoto Kyoto Institute of Technology Evaluation of Soft Error Tolerance of Redundant Flip-Flop in 65nm Bulk and FD-SOI Processes.
Eiji Sonezaki, Kubota Kanto, Masaki Masuda, Shohei Kanda, Jun Furuta, Kazutoshi Kobayashi (KIT) ICD2015-83 CPSY2015-96
According to process down scaling, LSI becomes less reliable for soft errors. To increase the tolerance of FFs for soft ... [more] ICD2015-83 CPSY2015-96
pp.69-74
RECONF 2015-06-19
17:00
Kyoto Kyoto University [Invited Talk] Reliability on Integrated Circuits
Kazutoshi Kobayashi (Kyoto Inst. of Tech.) RECONF2015-13
 [more] RECONF2015-13
p.71
VLD 2015-03-03
09:40
Okinawa Okinawa Seinen Kaikan Methodology for Reduction of Timing Margin by Considering Correlation between Process Variation and BTI
Michitarou Yabuuchi, Kazutoshi Kobayashi (Kyoto Inst. of Tech.) VLD2014-163
We analyze the efficiency of the design methodology by using circuit
simulations. The design methodology which consider... [more]
VLD2014-163
pp.61-66
ICD, CPSY 2014-12-02
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. Measurements and Evaluations of Aging Degradation Caused by Plasma Induced Damage in 65 nm Process
Ryo Kishida, Azusa Oshima, Kazutoshi Kobayashi (Kyoto Inst. Tech.) ICD2014-106 CPSY2014-118
Degradations of reliability caused by plasma induced damage (PID) have become a significant concern with miniaturizing a... [more] ICD2014-106 CPSY2014-118
pp.123-128
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2014-11-26
11:35
Oita B-ConPlaza Voltage Dependence of Single Event Transient Pulses on 65nm Silicon-on-Thin-BOX and Bulk Processes
Eiji Sonezaki, Kuiyuan Zhang, Jun Furuta, Kazutoshi Kobayashi (Kyoto Inst. of Tech.) VLD2014-84 DC2014-38
Recently, the growth of power consumption has been serious by process
scaling. The lower voltage is most effective to i... [more]
VLD2014-84 DC2014-38
pp.93-97
ICD, SDM 2014-08-04
09:00
Hokkaido Hokkaido Univ., Multimedia Education Bldg. [Invited Talk] A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14μA Sleep Current using Reverse-Body-Bias Assisted 65nm SOTB CMOS Technology
Koichiro Ishibashi (UEC), Nobuyuki Sugii (LEAP), Kimiyoshi Usami (SIT), Hideharu Amano (KU), Kazutoshi Kobayashi (KIT), Cong-Kha Pham (UEC), Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Yasuo Yamaguchi, Hidekazu Oda, Takumi Hasegawa, Shinobu Okanishi, Hiroshi Yanagita (LEAP) SDM2014-62 ICD2014-31
 [more] SDM2014-62 ICD2014-31
pp.1-4
ICD, SDM 2014-08-05
14:55
Hokkaido Hokkaido Univ., Multimedia Education Bldg. Initial Frequency Degradation on Ring Oscillators in 65-nm SOTB Process Caused by Plasma-Induced Damage
Azusa Oshima, Ryo Kishida, Michitarou Yabuuchi, Kazutoshi Kobayashi (KIT) SDM2014-79 ICD2014-48
Reliability issues, such as plasma-induced damage (PID) and Bias Temperature
Instability (BTI), become dominant on inte... [more]
SDM2014-79 ICD2014-48
pp.93-98
VLD 2014-03-03
13:00
Okinawa Okinawa Seinen Kaikan Characterization of Random Telegraph Noise using Inhomogeneous Ring Oscillator
Shohei Nishimura, Takashi Matsumoto (Kyoto Univ.), Kazutoshi Kobayashi (Kyoto Inst. of Tech.), Hidetoshi Onodera (Kyoto Univ.) VLD2013-134
RTN has severe impact on combinational logic circuits. Extracting accurate (RTN-induced) variation information is a huge... [more] VLD2013-134
pp.1-6
VLD 2014-03-03
13:25
Okinawa Okinawa Seinen Kaikan Impact of CMOS Transistor Random Telegraph Noise on Combinational Circuit Delay
Takashi Matsumoto (Kyoto Univ.), Kazutoshi Kobayashi (Kyoto Inst. of Tech.), Hidetoshi Onodera (Kyoto Univ.) VLD2013-135
 [more] VLD2013-135
pp.7-12
VLD 2014-03-05
10:25
Okinawa Okinawa Seinen Kaikan Evaluation of Multiple Cell Upsets Considering Parasitic Bipolar Effects
Jun Furuta (Kyoto Univ.), Kazutoshi Kobayashi (Kyoto Inst. of Tech.), Hidetoshi Onodera (Kyoto Univ.) VLD2013-157
As a result of the process scaling, radiation-induced Multiple Cell
Upsets (MCUs) become major issue for LSI reliabilit... [more]
VLD2013-157
pp.125-130
IPSJ-SLDM, CPSY, RECONF, VLD [detail] 2014-01-29
14:50
Kanagawa Hiyoshi Campus, Keio University Prediction Model for Process Variation and BTI-Induced Degradation by Measurement Data on FPGA
Michitarou Yabuuchi, Kazutoshi Kobayashi (Kyoto Inst. of Tech.) VLD2013-129 CPSY2013-100 RECONF2013-83
We propose a prediction model for BTI-induced degradation by
measurement data on 65nm-process FPGAs. BTI-induced degrad... [more]
VLD2013-129 CPSY2013-100 RECONF2013-83
pp.161-166
ICD 2014-01-29
11:00
Kyoto Kyoto Univ. Tokeidai Kinenkan [Invited Talk] Reliability on Integrated Circuits -- Details of Soft Errors --
Kazutoshi Kobayashi (Kyoto Inst. of Tech.) ICD2013-134
本講演では,LSIの微細化とともに悪化している信頼性のうち,特にソフトエラー
と呼ばれる一時故障に焦点を当ててその概要を紹介する.ソフトエラーは主に
パッケージからのα線,宇宙からの中性子線によるメモリやFFの一時的な反転
である.α... [more]
ICD2013-134
p.81
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