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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM | 2012-02-07 16:05 |
Hokkaido | Possibility of High Order Harmonic Oscillators Based on Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs Jie Pan, Kazuki Hayano, Masayuki Mori, Koichi Maezawa (Univ. Toyama)  ED2011-147 SDM2011-164 |
[more] | ED2011-147 SDM2011-164 pp.31-34 |
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| ED | 2011-07-30 13:55 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | InSb MOS diodes on a Si(111) substrate grown by surface reconstruction ontrolled epitaxy Azusa Kadoda, Tatsuya Iwasugi, Kimihiko Nakatani, Koji Nakayama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2011-55 |
We have reported that high quality InSb films can be grown by surface reconstruction controlled epitaxy. In the growth, ... [more] | ED2011-55 pp.91-96 |
| CPM, SDM, ED | 2011-05-20 09:00 |
Aichi | Nagoya Univ. (VBL) | High electron mobility InSb film grown by surface reconstruction controlled epitaxy Masayuki Mori, Koji Nakayama, Kimihiko Nakatani, Yuichiro Yasui, Koichi Maezawa (Univ. of Toyama) ED2011-19 CPM2011-26 SDM2011-32 |
[more] | ED2011-19 CPM2011-26 SDM2011-32 pp.95-98 |
| SDM, ED | 2011-02-24 09:55 |
Hokkaido | Hokkaido Univ. | A Traveling Wave Amplifier Based on Resonant Tunneling Diode Pairs Employing Composite Right/Left Handed Transmission Line Configuration Koichi Maezawa, Koji Kasahara, Jie Pan, Masayuki Mori (Univ. Toyama) ED2010-201 SDM2010-236 |
This paper proposes a traveling wave amplifier based on transmission lines (TLs) periodically loaded with resonant tu... [more] |
ED2010-201 SDM2010-236 pp.53-56 |
| ED | 2010-09-13 14:55 |
Fukuoka | Kyushu Institute of Technology(Wakamatsu) | Possibility of digital microphone sensors using frequency modulation delta-sigma ADC Koichi Maezawa, Shingo Shibata, Kazuhiro Takaoka, Masayuki Mori (Univ. Toyama) ED2010-126 |
A Delta Sigma Analog/Digital converter using frequency modulation (FM) intermediate signal is a promising device for sen... [more] | ED2010-126 pp.19-23 |
| ED | 2010-06-17 13:00 |
Ishikawa | JAIST | Growth of InSb films on the V-grooved Si(001) substrate with InSb bi-layer Tatsuya Iwasugi, Sara Khamseh, Azusa Kadoda, Kimihiko Nakatani, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2010-33 |
We have reported that InSb films grown on a Si(111) substrate with InSb bi-layer rotate by 30° degree with respect to Si... [more] | ED2010-33 pp.1-4 |
| SDM, ED | 2009-02-26 16:55 |
Hokkaido | Hokkaido Univ. | RTD-Pair Oscillators Integrated on an AlN Ceramic Substrate Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals Co., Ltd.,) ED2008-231 SDM2008-223 |
The RTD-pair oscillators were designed and fabricated on an AlN ceramic substrate employing novel integration process ba... [more] | ED2008-231 SDM2008-223 pp.41-46 |
| ED | 2008-06-14 09:50 |
Ishikawa | Kanazawa University | Fabrication of Resonant Tunneling Devic Blocks for Fluidic Self-Assembly Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals) ED2008-34 |
Fluidic Self-Assembly (FSA) is an innovative technique for heterogeneous integration. This technique enables us to assem... [more] | ED2008-34 pp.67-72 |
| ED | 2008-06-14 11:20 |
Ishikawa | Kanazawa University | Heteroepitaxial growth of InSb films via Si(111)-√7×√3-In surface reconstruction Masayuki Mori, Mitsufumi Saito, Kyohei Nagashima, Koji Ueda, Tatsuo Yoshida, Koichi Maezawa (Univ. Toyama) ED2008-37 |
The InSb films grown via In-Sb bi-layer (Si(111)-2×2-InSb surface reconstruction) rotates by 30 ° with respect to Si sub... [more] | ED2008-37 pp.81-84 |
| ED | 2008-06-14 11:45 |
Ishikawa | Kanazawa University | Effects of In and Sb mono-layers to form rotated InSb films on a Si(111) substrate Mitsufumi Saito, Masayuki Mori, Koji Ueda, Koichi Maezawa (Univ. Toyama) ED2008-38 |
A new method for an InSb heteroepitaxial growth on a Si(111) substrate was introduced in our previous work, in which an ... [more] | ED2008-38 pp.85-90 |
| ED, SDM | 2008-01-31 10:15 |
Hokkaido | Ultra-short pulse generators using resonant tunneling diodes and their integration with antenna on AlN ceramic substrates Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Hiroya Andoh (Toyota College Tech.), Kazuhiro Akamatsu, Hirofumi Nakata (Nippon Mining & Metals) ED2007-247 SDM2007-258 |
Ultra-short pulse generations were demonstrated on the two types of resonant tunneling diode (RTD) pulse generators. T... [more] |
ED2007-247 SDM2007-258 pp.51-56 |
|
| ED | 2007-06-15 14:50 |
Toyama | Toyama Univ. | Growth of Insb films on Si(111) surface by 2-step growth Kazunori Murata, Norsuryati Binti Ahmad, Yu Tamura, Masayuki Mori, Toyokazu Tambo, Koichi Maezawa (Univ of Toyama) ED2007-35 |
Heteroepitaxial growth of InSb films on a Si(1 1 1) surface was carried out in an ultra-high vacuum (UHV) chamber at gro... [more] | ED2007-35 pp.21-25 |
| ED | 2007-06-15 15:15 |
Toyama | Toyama Univ. | Formation of high quality InSb film via InSb bi-layer on Si substrate Mitsufumi Saito, Masayuki Mori, Yuji Yamasita, Toyokazu Tambo, Koichi Maezawa (Univ. of Toyama) ED2007-36 |
[more] | ED2007-36 pp.27-32 |
| SDM, ED | 2007-02-01 14:10 |
Hokkaido | A resonant tunneling diode pair oscillator for high power operation Koichi Maezawa (Univ. of Toyama), Yohei Ookawa, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) |
High power operation was demonstrated for the novel RTD oscillator circuit fabricated with metamorphic RTDs. The circuit... [more] | ED2006-242 SDM2006-230 pp.13-16 |
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| ED, SDM | 2006-01-27 11:45 |
Hokkaido | Hokkaido Univ. | A novel resonant tunneling delta-sigma AD converter suitable for high frequency operation Koichi Maezawa, Wataru Matsubara, Koki Furukawa, Takashi Mizutani (Nagoya Univ.) |
A $\Delta\Sigma$ modulator using a frequency modulation intermediate signal was demonstrated using a resonant tunneling ... [more] | ED2005-237 SDM2005-249 pp.33-38 |
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