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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-11-30 13:55 |
Shizuoka | Effects of surface treatments after gate recess etching on AlGaN/GaN MIS-HFETs with insulators formed by ALD Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Technol.)  ED2023-16 CPM2023-58 LQE2023-56 |
Degradation of electrical characteristics due to etching damage during formation of recess structure has been an issue f... [more] | ED2023-16 CPM2023-58 LQE2023-56 pp.11-14 |
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| CPM, ED, SDM | 2023-05-19 15:40 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Fabrication and evaluation of transfer-free graphene FETs on sapphire substrates using agglomeration phenomenon of Ni patterns with ultra-fine structure Ichiro Kato, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2023-5 CPM2023-5 SDM2023-22 |
Using graphene as a FET requires transferring it to an insulating substrate, and defects may be introduced in the graphe... [more] | ED2023-5 CPM2023-5 SDM2023-22 pp.20-23 |
| CPM, ED, LQE | 2022-11-24 15:45 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Estimation of electrical characteristics of surface treatment after recess structure formation in AlGaN/GaN MIS-HEMTs Keitaro Toda, Toshiharu Kubo, Takashi Egawa (NITech) ED2022-37 CPM2022-62 LQE2022-70 |
Degradation of electrical characteristics due to etching damage during recess structure formation has been an issue for ... [more] | ED2022-37 CPM2022-62 LQE2022-70 pp.61-64 |
| CPM, ED, LQE | 2022-11-24 16:05 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
AlGaN/GaN vertical devices on Si substrate with highly resistive strained layer superlattice Takaya Koike, Koki Hayashi, Ryosuke Hayafuji, Toshiharu Kubo, Takashi Egawa (NIT) ED2022-38 CPM2022-63 LQE2022-71 |
[more] | ED2022-38 CPM2022-63 LQE2022-71 pp.65-68 |
| ED, CPM, LQE | 2021-11-26 14:30 |
Online | Online | Estimation of electrical characteristics of normally-off type AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Keitaro Toda, Toshiharu Kubo, Takashi Egawa (NITech) ED2021-31 CPM2021-65 LQE2021-43 |
[more] | ED2021-31 CPM2021-65 LQE2021-43 pp.75-78 |
| LQE, CPM, ED | 2020-11-26 13:50 |
Online | Online | Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Shunichi Yokoi, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2020-8 CPM2020-29 LQE2020-59 |
Since SiO2 has a large band gap of approximately 9 eV, the interface characteristics of the interface and gate leakage c... [more] | ED2020-8 CPM2020-29 LQE2020-59 pp.29-32 |
| CPM, LQE, ED | 2019-11-21 13:55 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2019-41 CPM2019-60 LQE2019-84 |
SiO2 has a relatively large band gap of approximately 9 eV. Therefore, by fabricating SiO2/Al2O3 double insulators, GaN-... [more] | ED2019-41 CPM2019-60 LQE2019-84 pp.37-40 |
| ED, LQE, CPM | 2018-11-30 09:00 |
Aichi | Nagoya Inst. tech. | A 2.5-kV-breakdown-voltage AlGaN-channel HFET with a strain-controlled AlGaInN barrier layer Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. of Tech.) ED2018-41 CPM2018-75 LQE2018-95 |
Novel AlGaN-channel heterostructures employing quaternary AlGaInN barriers were grown by metalorganic chemical vapor dep... [more] | ED2018-41 CPM2018-75 LQE2018-95 pp.41-44 |
| ED, LQE, CPM | 2018-11-30 09:25 |
Aichi | Nagoya Inst. tech. | Effects of annealing ambient on electrical properties of ALD-Al2O3/AlGaN/GaN MIS-HEMTs Keita Furuoka, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2018-42 CPM2018-76 LQE2018-96 |
We conducted post-deposition annealing (PDA) and post-metalization annealing in various annealing atmosphere and evaluat... [more] | ED2018-42 CPM2018-76 LQE2018-96 pp.45-48 |
| LQE, CPM, ED | 2017-12-01 13:45 |
Aichi | Nagoya Inst. tech. | Estimation of effects of layer thickness and annealing on chemical states of ALD-Al2O3 layers on AlGaN by using XPS and ESR Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2017-64 CPM2017-107 LQE2017-77 |
As the insulator for MIS structures in GaN-based power devices, Al2O3 fabricated by ALD has often been used. The post-de... [more] | ED2017-64 CPM2017-107 LQE2017-77 pp.73-76 |
| ED, LQE, CPM | 2015-11-27 11:15 |
Osaka | Osaka City University Media Center | Interface states and device characteristics of AlGaN/GaN MIS-HEMTs with HfO2 fabricated by atomic layer deposition Gosuke Nishino, Toshiharu Kubo, Takashi Egawa (NITech) ED2015-82 CPM2015-117 LQE2015-114 |
We previously reported that MIS-HEMTs with Al2O3 fabricated by ALD using both H2O and O3 as oxygen precursors showed goo... [more] | ED2015-82 CPM2015-117 LQE2015-114 pp.73-76 |
| ED, LQE, CPM | 2012-11-29 14:45 |
Osaka | Osaka City University | Electrical characteristics of MIS-diodes with Al2O3 deposited by ALD on GaN Yasuhiro Iwata, Toshiharu Kubo, Takashi Egawa (NITech) ED2012-73 CPM2012-130 LQE2012-101 |
We focused Al2O3 as an insulator in MIS structures. MIS-diodes were fabricated with Al2O3 deposited by ALD on GaN at 200... [more] | ED2012-73 CPM2012-130 LQE2012-101 pp.33-36 |
| LQE, ED, CPM | 2011-11-17 14:10 |
Kyoto | Katsura Hall，Kyoto Univ. | Characterization of insulators and interfaces in GaN-based MIS-diodes Yasuhiro Iwata, Toshiharu Kubo, Takashi Egawa (NITech) ED2011-80 CPM2011-129 LQE2011-103 |
[more] | ED2011-80 CPM2011-129 LQE2011-103 pp.35-38 |
| ED, LQE, CPM | 2009-11-20 11:45 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Surface properties and deep electronic levels of AlGaN with high Al compositions Katsuya Sugawara, Toshiharu Kubo (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ.) ED2009-152 CPM2009-126 LQE2009-131 |
[more] | ED2009-152 CPM2009-126 LQE2009-131 pp.115-118 |
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