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| Chair |
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Tetsuro Endo (Tohoku Univ.) |
| Vice Chair |
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Yasuo Nara (Fujitsu Semiconductor) |
| Secretary |
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Yukinori Ono (NTT), Shintaro Nomura (Tsukuba Univ.) |
| Assistant |
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Yoshitaka Sasago (Hitachi) |
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| Chair |
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Tetsu Kachi (TOYOTA CRDL) |
| Vice Chair |
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Naoki Hara (Fujitsu Labs.) |
| Secretary |
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Kunio Tsuda (Toshiba), Michihiko Suhara (Toshiba) |
| Assistant |
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Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.) |
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| Chair |
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Yasushi Takemura (Yokohama National Univ.) |
| Vice Chair |
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Yasushi Takano (Shizuoka Univ.) |
| Secretary |
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Toshishige Shimamura (NTT), Katsuya Abe (Shinshu Univ.) |
| Assistant |
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Koji Enbutsu (NTT), Tomomasa Sato (Kanabgawa Univ.) |
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| Conference Date |
Thu, May 17, 2012 13:00 - 17:10
Fri, May 18, 2012 09:00 - 16:30 |
| Topics |
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| Conference Place |
Venture Business Laboratory, Toyohashi University of Technology |
| Address |
1-1, Hibarigaoka, Tempa-ku, Toyohashi-shi, 441-8580 Japan |
| Transportation Guide |
http://www.tut.ac.jp/english/introduction/map.html |
Contact
Person |
Dr. Hiroshi Okada
+81-532-44-6721 |
| Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics and cooperated by VBL, Toyohashi University of Technology
|
Thu, May 17 PM
13:00 - 15:20 |
| (1) |
13:00-13:40 |
[Invited Talk]
Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots and Its Application to Light Emitting Diodes |
Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
| (2) |
13:40-14:05 |
Improvement in crystalline quality of GaAsN alloy by high temperature growth |
Futoshi Fukami, Noriyuki Urakami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) |
| (3) |
14:05-14:30 |
Electrical properties of n- and p-type AlGaPN for dislocation-free light-emitting devices on Si substrate |
Hironari Ito, Keisuke Kumagai, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. of Tech.) |
| (4) |
14:30-14:55 |
Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si |
Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) |
| (5) |
14:55-15:20 |
Growth-rate dependence of GaP structure grown Si substrates using metalorganic vapor phase epitaxy |
Tatsuya Takagi, Shunshin Ka, Ryoh Miyahara, Yasushi Takano (Shizuoka Univ.) |
| |
15:20-15:30 |
Break ( 10 min. ) |
Thu, May 17 PM
15:30 - 17:10 |
| (6) |
15:30-15:55 |
A Surface-stress Sensor Based on a MEMS Fabry-Perot Interferometer for Label-free Protein Detection |
Kazuhiro Takahashi, Hiroki Oyama, Nobuo Misawa, Koichi Okumura, Makoto Ishida, Kazuaki Sawada (Toyohashi Tech.) |
| (7) |
15:55-16:20 |
Fabrication and transmit-receive characteristics of ultrasonic transducers array using epitaxial PZT thin films on γ-Al2O3/Si substrates |
Katsuya Ozaki, Masato Nishimura, keisuke Suzuki, Yasuyuki Numata (Toyohashi tech.), Nagaya Okada (Honda Electronics), Daisuke Akai, Makoto Ishida (Toyohashi tech.) |
| (8) |
16:20-16:45 |
Fabrication of portable hydrogen sensors based on photochemically deposited SnO2 thin films |
Dengbaoleer Ao, Yukihisa Moriguchi, Masaya Ichimura (Nagoya Inst. of Tech.Univ) |
| (9) |
16:45-17:10 |
Preparation and evaluation of Ga2O3 oxygen sensors |
Masaaki Isai, Takahiro Yamamoto, Takuma Tori (Shizuoka Univ.) |
Fri, May 18 AM
09:00 - 10:15 |
| (10) |
09:00-09:25 |
High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa |
Masashi Kashiwano, Jun Hirai, Shunsuke Ikeda, Motohiko Fujimatsu, Yasuyuki Miyamoto (TITech) |
| (11) |
09:25-09:50 |
Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces |
Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.) |
| (12) |
09:50-10:15 |
Evaluation of GaN substrates for vertical GaN power device applications |
Tetsu Kachi, Uesugi Tsutomu (Toyota RDL) |
| |
10:15-10:25 |
Break ( 10 min. ) |
Fri, May 18 AM
10:25 - 12:05 |
| (13) |
10:25-10:50 |
Electrical Property of n-type GaPN:S Grown by Alternately N Supplied Organometallic Vapor Phase Epitaxy |
Yuya Nagamoto, Katsuhiko Matsuoka, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (TUT) |
| (14) |
10:50-11:15 |
Low temperature crystallization of SiC films by metal induced growth technique |
Katsuya Abe, Ryohei Ushikusa, Yuya Sakaguchi, Takuu Syu, Tomohiko Yamakami (Shinshu Univ.) |
| (15) |
11:15-11:40 |
Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation |
Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) |
| (16) |
11:40-12:05 |
Growth and characterization of strained Ge epitaxial layers on SiGe substrates |
Takashi Yamaha, Osamu Nakatsuka (Nagoya Univ.), Kyoichi Kinoshita, Shinichi Yoda (JAXA), Shigeaki Zaima (Nagoya Univ.) |
| |
12:05-13:00 |
Lunch Break ( 55 min. ) |
Fri, May 18 PM
13:00 - 14:40 |
| (17) |
13:00-13:25 |
Influences of Crystal Structure and Orientation on Band Offsets at the CdS/Cu2ZnSnS4 Interface by First Principles Study |
Wujisiguleng Bao, Ichimura Masaya (Nagoya Inst. of Tech) |
| (18) |
13:25-13:50 |
Electrodeposition of Ga2O3 Thin Films from Aqueous Gallium Sulfate Solutions |
Junie Jhon M. Vequizo, Masaya Ichimura (Nagoya Inst. of Tech.) |
| (19) |
13:50-14:15 |
H2O2 treatment of the Cu2O thin films deposited by the electrochemical method |
Ying Song, Masaya Ichimura (Nagoya Inst. of Tech.) |
| (20) |
14:15-14:40 |
Characterization of Local Electronic Transport and Electronic Emission Properties of Pillar-Shaped Si Nanostructures |
Daichi Takeuchi, Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.), Hirokazu Kaki, Tsukasa Hayashi (NISSIN ELECTRIC Co. Ltd.) |
| |
14:40-14:50 |
Break ( 10 min. ) |
Fri, May 18 PM
14:50 - 16:30 |
| (21) |
14:50-15:15 |
Preparation and evaluation of LiMn2O4 films prepared by sputtering method |
Akio Niwa, Masaaki Isai, Mitsuhiro Nakamura, Takashi Noguchi (Shizuoka Univ.) |
| (22) |
15:15-15:40 |
Co-catalyitic effect on improving the photocatalytic properties of TiO2 films |
Masaaki Isai, Ikuta Nakamura, Yuuki Hieda, Fumiya Fukazawa (Shizuoka Univ.), Yoichi Hoshi (Tokyo Polytech.Univ.) |
| (23) |
15:40-16:05 |
A tunable color filter based on sub-wavelength gratings using electrostatic microactuator |
Hiroaki Honma, Hajime Miyao, Kazuhiro Takahashi, Makoto Ishida, Kazuaki Sawada (Toyohashi Tech.) |
| (24) |
16:05-16:30 |
Analysis of Optical Frequency Signal Transmission through Whispering Gallery Mode |
Masashi Fukuhara, Yenling Yu, Takuma Aihara, Kyohe Nakagawa, Hirotaka Yamashita (Toyohashi Univ. of Tech.), Kenzo Yamaguchi (Kagawa Univ.), Mitsuo Fukuda (Toyohashi Univ. of Tech.) |
| Announcement for Speakers |
| Invited Talk | Each speech will have 35 minutes for presentation and 5 minutes for discussion. |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E- : o         |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Hara Naoki （Fujitsu Lab.）
TEL : +81-46-250-8242、FAX : +81-46-250-8168
E- :    o    
Kunio Tsuda（Toshiba）
TEL : +81-44-549-2142、FAX : +81-44-520-1501
E- :   o   ba
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E- :      t 
Tetsuzo Ueda（Panasonic)
TEL：+81-75-956-8273、FAX：+81-75-956-9110
E-：   zopa c |
| CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
| Contact Address |
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Last modified: 2012-04-10 19:02:44
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