| Paper Abstract and Keywords |
| Presentation |
2012-06-21 11:55
Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks
Takuji Hosoi, Yuki Odake, Hiroaki Arimura, Keisuke Chikaraishi, Naomu Kitano, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Effective work function control and equivalent oxide thickness (EOT) scaling are the major concerns for implementing metal/high-k gate stacks with gate-first process. In addition to interfacial SiO2 growth, it has been reported that metal elements such as Hf and La atoms in high-k layers diffuse into gate electrode after high-temperature activation annealing. In this work, we have investigated the Hf diffusion kinetics in TiN/HfSiO gate stacks. The Hf upward diffusion is found to be independent of interfacial SiO$_2$ growth, but depends on the amount of oxygen in the gate stacks. It is also revealed that, when the TiN electrode contains a certain amount of oxygen, Hf diffusion into TiN occurs at above 650$^o$C and leads to high-k degradation. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
high-k dielectrics / metal gate / diffusion / HfSiO / TiN / MIPS / / |
| Reference Info. |
IEICE Tech. Rep., vol. 112, no. 92, SDM2012-51, pp. 43-46, June 2012. |
| Paper # |
SDM2012-51 |
| Date of Issue |
2012-06-14 (SDM) |
| Conference Information |
| Committee |
SDM |
| Conference Date |
2012-06-21 - 2012-06-21 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
VBL, Nagoya Univ. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Science and Technology for Dielectric Thin Films for Electron Devices |
| Paper Information |
| Registration To |
SDM |
| Conference Code |
2012-06-SDM |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks |
| Sub Title (in English) |
|
| Keyword(1) |
high-k dielectrics |
| Keyword(2) |
metal gate |
| Keyword(3) |
diffusion |
| Keyword(4) |
HfSiO |
| Keyword(5) |
TiN |
| Keyword(6) |
MIPS |
| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Takuji Hosoi |
| 1st Author's Affiliation |
Osaka University (Osaka Univ.) |
| 2nd Author's Name |
Yuki Odake |
| 2nd Author's Affiliation |
Osaka University (Osaka Univ.) |
| 3rd Author's Name |
Hiroaki Arimura |
| 3rd Author's Affiliation |
Osaka University (Osaka Univ.) |
| 4th Author's Name |
Keisuke Chikaraishi |
| 4th Author's Affiliation |
Osaka University (Osaka Univ.) |
| 5th Author's Name |
Naomu Kitano |
| 5th Author's Affiliation |
Osaka University (Osaka Univ.) |
| 6th Author's Name |
Takayoshi Shimura |
| 6th Author's Affiliation |
Osaka University (Osaka Univ.) |
| 7th Author's Name |
Heiji Watanabe |
| 7th Author's Affiliation |
Osaka University (Osaka Univ.) |
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| Speaker |
1 |
| Date Time |
2012-06-21 11:55:00 |
| Presentation Time |
20 |
| Registration for |
SDM |
| Paper # |
IEICE-SDM2012-51 |
| Volume (vol) |
IEICE-112 |
| Number (no) |
no.92 |
| Page |
pp.43-46 |
| #Pages |
IEICE-4 |
| Date of Issue |
IEICE-SDM-2012-06-14 |
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