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Paper Abstract and Keywords
Presentation 2012-06-21 15:55
Doping and behaviors of impurity atoms in silicon nanowires -- Segregation behaviors of dopant atoms during thermal oxidation --
Naoki Fukata (NIMS), Ryo Takiguchi, Shinya Ishida, Shigeki Yokono (Univ. of Tsukuba), Takashi Sekiguchi (NIMS), Kouichi Murakami (Univ. of Tsukuba)
Abstract (in Japanese) (See Japanese page) 
(in English) In order to realize the next-generation MOSFETs, it is indispensable to realize the size, site, and structure controls in nano-scale. In addition to these, doping control and the development of characterization methods are also very important. Until now, we could experimentally succeed in detecting the dopant impurities (B and P) and clarify their bonding and electrical states in SiNWs by micro-Raman scattering and electron spin resonance methods. The segregation behaviors of B and P atoms during thermal oxidation were investigated by using these techniques, showing that B segregation into surface oxide layers was more pronounced than P segregation.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon nanowire / Doping / Raman scattering / Electron spin resonance / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 92, SDM2012-58, pp. 81-85, June 2012.
Paper # SDM2012-58 
Date of Issue 2012-06-14 (SDM) 

Conference Information
Committee SDM  
Conference Date 2012-06-21 - 2012-06-21 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2012-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Doping and behaviors of impurity atoms in silicon nanowires 
Sub Title (in English) Segregation behaviors of dopant atoms during thermal oxidation 
Keyword(1) Silicon nanowire 
Keyword(2) Doping 
Keyword(3) Raman scattering 
Keyword(4) Electron spin resonance 
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1st Author's Name Naoki Fukata  
1st Author's Affiliation National Institute for Materials Science (NIMS)
2nd Author's Name Ryo Takiguchi  
2nd Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
3rd Author's Name Shinya Ishida  
3rd Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
4th Author's Name Shigeki Yokono  
4th Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
5th Author's Name Takashi Sekiguchi  
5th Author's Affiliation National Institute for Materials Science (NIMS)
6th Author's Name Kouichi Murakami  
6th Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
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Speaker 1 
Date Time 2012-06-21 15:55:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2012-58 
Volume (vol) IEICE-112 
Number (no) no.92 
Page pp.81-85 
#Pages IEICE-5 
Date of Issue IEICE-SDM-2012-06-14 

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