| Paper Abstract and Keywords |
| Presentation |
2012-06-21 11:35
Effect of Reducing Character of Gate Metals on Pr Valence State in Pr Oxide Film on Ge Substrate
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We have investigated the impact of the gate metal on the chemical bonding state in the metal/Pr-oxide/Ge gate stack structure focusing on the oxygen chemical potential (¦ÌO). The reductive character of gate metal reduces the Pr-oxide film, increasing the ratio of the Pr3+ component in Pr-oxide film. The reductive character of metal also affects on the Pr-oxide/Ge interfacial structure. It leads to the decrease in the areal density of Ge bonding with O (Ge-oxide and/or PrGe-oxide). These reducing reactions can be explained by the low ¦ÌO of metal with reductive character than that of PrO2 formation and GeO2 formation. These results suggest that the selection of gate metal in metal/Pr-oxide/Ge gate stack structure focusing on ¦ÌO is quite important to achieve the thin EOT, attributing to both the formation of the h-Pr2O3 crystalline phase of Pr-oxide and the decrease in the amount of Ge oxides. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
germanium / praseodymium-oxide / gate metal / reduction reaction / valence state / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 112, no. 92, SDM2012-50, pp. 37-42, June 2012. |
| Paper # |
SDM2012-50 |
| Date of Issue |
2012-06-14 (SDM) |
| Conference Information |
| Committee |
SDM |
| Conference Date |
2012-06-21 - 2012-06-21 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
VBL, Nagoya Univ. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Science and Technology for Dielectric Thin Films for Electron Devices |
| Paper Information |
| Registration To |
SDM |
| Conference Code |
2012-06-SDM |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Effect of Reducing Character of Gate Metals on Pr Valence State in Pr Oxide Film on Ge Substrate |
| Sub Title (in English) |
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| Keyword(1) |
germanium |
| Keyword(2) |
praseodymium-oxide |
| Keyword(3) |
gate metal |
| Keyword(4) |
reduction reaction |
| Keyword(5) |
valence state |
| Keyword(6) |
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| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Kimihiko Kato |
| 1st Author's Affiliation |
Nagoya University (Nagoya Univ.) |
| 2nd Author's Name |
Mitsuo Sakashita |
| 2nd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
| 3rd Author's Name |
Wakana Takeuchi |
| 3rd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
| 4th Author's Name |
Noriyuki Taoka |
| 4th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
| 5th Author's Name |
Osamu Nakatsuka |
| 5th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
| 6th Author's Name |
Shigeaki Zaima |
| 6th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
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| Speaker |
1 |
| Date Time |
2012-06-21 11:35:00 |
| Presentation Time |
20 |
| Registration for |
SDM |
| Paper # |
IEICE-SDM2012-50 |
| Volume (vol) |
IEICE-112 |
| Number (no) |
no.92 |
| Page |
pp.37-42 |
| #Pages |
IEICE-6 |
| Date of Issue |
IEICE-SDM-2012-06-14 |
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