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Paper Abstract and Keywords
Presentation 2012-06-21 16:35
Interface controlled silicide Schottky S/D for future 3D devices
Yuta Tamura, Ryo Yoshihara, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech)
Abstract (in Japanese) (See Japanese page) 
(in English) This paper presents Ni/Si stacked-structure as interface control for silicidation. An atomically flat $NiSi_2$ film interface on both Si substrate and Si Fin was achieved by Ni/Si stacked-structure and stable physical and electrical properties in a wide process-temperature window were maintained. Schottky barrier height tuning capability is successfully demonstrated with P or B incorporation while presenting thermal stability. Furthermore, suppression of ambipolar behavior in SOI silicide Schottky S/D MOSFET is confirmed by Schottky barrier height moduration.
Keyword (in Japanese) (See Japanese page) 
(in English) stacked-structure / silicide / interface control / Schottky barrier height / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 92, SDM2012-59, pp. 87-92, June 2012.
Paper # SDM2012-59 
Date of Issue 2012-06-14 (SDM) 

Conference Information
Committee SDM  
Conference Date 2012-06-21 - 2012-06-21 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2012-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Interface controlled silicide Schottky S/D for future 3D devices 
Sub Title (in English)  
Keyword(1) stacked-structure 
Keyword(2) silicide 
Keyword(3) interface control 
Keyword(4) Schottky barrier height 
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yuta Tamura  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Ryo Yoshihara  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Kuniyuki Kakushima  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
4th Author's Name Parhat Ahmet  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
5th Author's Name Yoshinori Kataoka  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
6th Author's Name Akira Nishiyama  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
7th Author's Name Nobuyuki Sugii  
7th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
8th Author's Name Kazuo Tsutsui  
8th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
9th Author's Name Kenji Natori  
9th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
10th Author's Name Takeo Hattori  
10th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
11th Author's Name Hiroshi Iwai  
11th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
Speaker 1 
Date Time 2012-06-21 16:35:00 
Presentation Time 20 
Registration for SDM 
Paper # IEICE-SDM2012-59 
Volume (vol) IEICE-112 
Number (no) no.92 
Page pp.87-92 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2012-06-14 

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