| Paper Abstract and Keywords |
| Presentation |
2012-04-28 10:20
Epitaxial Growth of Silicon Films on Porous Silicon Underlayer by Micro-Thermal-Plasma-Jet Irradiation
Shohei Hayashi, Ryohei Matsubara, Yuji Fujita, Mitsuhisa Ikeda, Seiichiro Higashi (Hiroshima Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Amorphous silicon (a-Si) film on porous silicon (PS) underlayer were melted and rapid solidification was induced by micro-thermal-plasma-jet irradiation. Because the thermal conduction can be controlled by changing structure, a-Si films on PS formed by the porosity of 42 % and the PS layer thickness of 20.8 um were easily melted by very high speed of 4000 mm/s. Crystallized Si films show a high crystalline volume fraction of 100 % and lower tensile stress compared to that of Si films crystallized on quartz substrates. In addition, crystallized Si films on PS layer show strong orientation to {100} direction, which suggests liquid phase epitaxial growth from PS layer. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Micro-Thermal-Plasma-Jet / Porous Silicon / Epitaxial Growth / / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 112, no. 18, SDM2012-14, pp. 63-66, April 2012. |
| Paper # |
SDM2012-14, OME2012-14 |
| Date of Issue |
2012-04-20 (SDM, OME) |
| Conference Information |
| Committee |
SDM OME |
| Conference Date |
2012-04-27 - 2012-04-28 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Okinawa-Ken-Seinen-Kaikan Bldg. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics |
| Paper Information |
| Registration To |
SDM |
| Conference Code |
2012-04-SDM-OME |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Epitaxial Growth of Silicon Films on Porous Silicon Underlayer by Micro-Thermal-Plasma-Jet Irradiation |
| Sub Title (in English) |
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| Keyword(1) |
Micro-Thermal-Plasma-Jet |
| Keyword(2) |
Porous Silicon |
| Keyword(3) |
Epitaxial Growth |
| Keyword(4) |
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| Keyword(5) |
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| 1st Author's Name |
Shohei Hayashi |
| 1st Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
| 2nd Author's Name |
Ryohei Matsubara |
| 2nd Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
| 3rd Author's Name |
Yuji Fujita |
| 3rd Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
| 4th Author's Name |
Mitsuhisa Ikeda |
| 4th Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
| 5th Author's Name |
Seiichiro Higashi |
| 5th Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
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| Speaker |
1 |
| Date Time |
2012-04-28 10:20:00 |
| Presentation Time |
20 |
| Registration for |
SDM |
| Paper # |
IEICE-SDM2012-14,IEICE-OME2012-14 |
| Volume (vol) |
IEICE-112 |
| Number (no) |
no.18(SDM), no.19(OME) |
| Page |
pp.63-66 |
| #Pages |
IEICE-4 |
| Date of Issue |
IEICE-SDM-2012-04-20,IEICE-OME-2012-04-20 |
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