| Paper Abstract and Keywords |
| Presentation |
2012-04-27 17:10
Bottom Gate TFT using Low Temperature Deposited Nanocrystalline-Si
Asuka Syuku, Eiji Takahashi, Yasunori Andoh (Nissin Electric) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Thin film transistors (TFTs) with nanocrystalline silicon (nc-Si) films which were directly deposited on substrate at 150¡î were fabricated by using ICP (Inductively Coupled Plasma) CVD method. The NH3 plasma treatment after nc-Si deposition increased TFT mobility up to 0.48cm2/Vs. The threshold voltage shift (¦¤Vth) after gate bias stress of 10000sec at +20V was 1.94V. Furthermore, nc-Si TFT deposited using SiF4 gas aimed for terminating film defects by Fluorine atoms showed good transfer characteristics. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
nc-Si / TFT / ICPCVD / / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 112, no. 18, SDM2012-10, pp. 45-48, April 2012. |
| Paper # |
SDM2012-10, OME2012-10 |
| Date of Issue |
2012-04-20 (SDM, OME) |
| Conference Information |
| Committee |
SDM OME |
| Conference Date |
2012-04-27 - 2012-04-28 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Okinawa-Ken-Seinen-Kaikan Bldg. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics |
| Paper Information |
| Registration To |
SDM |
| Conference Code |
2012-04-SDM-OME |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Bottom Gate TFT using Low Temperature Deposited Nanocrystalline-Si |
| Sub Title (in English) |
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| Keyword(1) |
nc-Si |
| Keyword(2) |
TFT |
| Keyword(3) |
ICPCVD |
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| 1st Author's Name |
Asuka Syuku |
| 1st Author's Affiliation |
Nissin Electric Co.,Ltd. (Nissin Electric) |
| 2nd Author's Name |
Eiji Takahashi |
| 2nd Author's Affiliation |
Nissin Electric Co.,Ltd. (Nissin Electric) |
| 3rd Author's Name |
Yasunori Andoh |
| 3rd Author's Affiliation |
Nissin Electric Co.,Ltd. (Nissin Electric) |
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| Speaker |
1 |
| Date Time |
2012-04-27 17:10:00 |
| Presentation Time |
20 |
| Registration for |
SDM |
| Paper # |
IEICE-SDM2012-10,IEICE-OME2012-10 |
| Volume (vol) |
IEICE-112 |
| Number (no) |
no.18(SDM), no.19(OME) |
| Page |
pp.45-48 |
| #Pages |
IEICE-4 |
| Date of Issue |
IEICE-SDM-2012-04-20,IEICE-OME-2012-04-20 |
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