| Paper Abstract and Keywords |
| Presentation |
2012-02-08 13:50
Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs
Toru Muramatsu, Seiya Kasai, Zenji Yatabe (Hokkaido Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Low-frequency noise in SiN-gate GaAs-based nanowire field-effect transistors (FETs) is characterized and analyzed focusing on its device size dependence. Noise in a nanometer-scale semiconductor is an important issue, since it increases as the feature size is decreased. We observe the increased low-frequency noise in the nanowire current, which is caused by charging and discharging electron traps in the SiN gate insulator. As the nanowire width is decreased, the noise intensity increased and the spectral shape changes from 1/f to 1/f 2. Noise spectrum is analyzed by computing the spectrum for specific trap distribution functions in terms of time constant. We find the relationship between the spectral shape and the distribution function. Change of the observed spectral slope is understood in terms of the broadening of the trap distribution. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
nanowire FET / GaAs / Insulator gate / low frequency noise / time constant / distribution function / / |
| Reference Info. |
IEICE Tech. Rep., vol. 111, no. 425, ED2011-157, pp. 89-93, Feb. 2012. |
| Paper # |
ED2011-157, SDM2011-174 |
| Conference Information |
| Committee |
ED SDM |
| Conference Date |
2012-02-07 - 2012-02-08 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
|
| Topics (in Japanese) |
機能ナノデバイスおよび関連技術 |
| Topics (in English) |
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| Paper Information |
| Registration To |
ED |
| Conference Code |
2012-02-ED-SDM |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs |
| Sub Title (in English) |
|
| Keyword(1) |
nanowire FET |
| Keyword(2) |
GaAs |
| Keyword(3) |
Insulator gate |
| Keyword(4) |
low frequency noise |
| Keyword(5) |
time constant |
| Keyword(6) |
distribution function |
| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Toru Muramatsu |
| 1st Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name |
Seiya Kasai |
| 2nd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
| 3rd Author's Name |
Zenji Yatabe |
| 3rd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
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| Speaker |
2 |
| Date Time |
2012-02-08 13:50:00 |
| Presentation Time |
25 |
| Registration for |
ED |
| Paper # |
IEICE-ED2011-157,IEICE-SDM2011-174 |
| Volume (vol) |
IEICE-111 |
| Number (no) |
IEICE-ED-425,IEICE-SDM-426 |
| Page |
pp.89-93 |
| #Pages |
IEICE-5 |
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