講演抄録/キーワード |
講演名 |
2009-11-19 18:00
GaN系表面ナノ構造光検出器 ○張 晶・直井美貴・酒井士郎(徳島大)・深野敦之・田中 覚(SCIVAX) ED2009-146 CPM2009-120 LQE2009-125 エレソ技報アーカイブへのリンク:ED2009-146 CPM2009-120 LQE2009-125 |
抄録 |
(和) |
(まだ登録されていません) |
(英) |
Conventional photodetector can detect intensity of incident light by voltage or current, but it is not intensive to the change of incident angle or wavelength. In this work, we demonstrate the fabrication method of a GaN-based nanostructure photodetector using nanoimprint lithography (NIL). The nanopattern is regular triangles consisting of columns, whose diameter and pitch are 150 and 300 nm, respectively. The photovoltage between p- and n-layers of this type of photodetector showed 6 or 12 periods when the incident illumination angles were changed on the surface or back side. Using the characteristics, this type of photodetector can find out the change of incidence angle or the change of wavelength of incident light. We demonstrate the principle of this type of photodetector using effective refractive index of the nanocolumn and air on the surface. At last possible applications in future are given. |
キーワード |
(和) |
/ / / / / / / |
(英) |
GaN / nanostructure / photodetector / Nanoimprint / Lithography / / / |
文献情報 |
信学技報, vol. 109, no. 290, LQE2009-125, pp. 85-89, 2009年11月. |
資料番号 |
LQE2009-125 |
発行日 |
2009-11-12 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2009-146 CPM2009-120 LQE2009-125 エレソ技報アーカイブへのリンク:ED2009-146 CPM2009-120 LQE2009-125 |
|