Paper Abstract and Keywords |
Presentation |
2009-04-14 10:15
A Process-Variation-Tolerant Dual-Power-Supply SRAM with 0.179μm2 Cell in 40nm CMOS Using Level-Programmable Wordline Driver Yuki Fujimura, Osamu Hirabayashi, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Keiichi Kushida, Takahiko Sasaki, Akira Katayama, Gou Fukano, Takaaki Nakazato, Yasushi Shizuki, Natsuki Kushiyama, Tomoaki Yabe (Toshiba Co.) ICD2009-5 Link to ES Tech. Rep. Archives: ICD2009-5 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We present a dual-power-supply SRAM with 0.179$\mu$m2 cell in 40nm CMOS, which is 10% smaller than the SRAM scaling trend. To improve the cell stability, the level-programmable wordline driver and dynamic array supply control are introduced. The cell failure rate is improved more than three orders of magnitude. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
High-Density SRAM / Dual-Power-Supply / Wordline Driver / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 2, ICD2009-5, pp. 21-26, April 2009. |
Paper # |
ICD2009-5 |
Date of Issue |
2009-04-06 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ICD2009-5 Link to ES Tech. Rep. Archives: ICD2009-5 |
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