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Paper Abstract and Keywords
Presentation 2009-04-14 10:15
A Process-Variation-Tolerant Dual-Power-Supply SRAM with 0.179μm2 Cell in 40nm CMOS Using Level-Programmable Wordline Driver
Yuki Fujimura, Osamu Hirabayashi, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Keiichi Kushida, Takahiko Sasaki, Akira Katayama, Gou Fukano, Takaaki Nakazato, Yasushi Shizuki, Natsuki Kushiyama, Tomoaki Yabe (Toshiba Co.) ICD2009-5 Link to ES Tech. Rep. Archives: ICD2009-5
Abstract (in Japanese) (See Japanese page) 
(in English) We present a dual-power-supply SRAM with 0.179$\mu$m2 cell in 40nm CMOS, which is 10% smaller than the SRAM scaling trend. To improve the cell stability, the level-programmable wordline driver and dynamic array supply control are introduced. The cell failure rate is improved more than three orders of magnitude.
Keyword (in Japanese) (See Japanese page) 
(in English) High-Density SRAM / Dual-Power-Supply / Wordline Driver / / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 2, ICD2009-5, pp. 21-26, April 2009.
Paper # ICD2009-5 
Date of Issue 2009-04-06 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2009-5 Link to ES Tech. Rep. Archives: ICD2009-5

Conference Information
Committee ICD  
Conference Date 2009-04-13 - 2009-04-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Daikanso (Matsushima, Miyagi) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor Memory Technologies 
Paper Information
Registration To ICD 
Conference Code 2009-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A Process-Variation-Tolerant Dual-Power-Supply SRAM with 0.179μm2 Cell in 40nm CMOS Using Level-Programmable Wordline Driver 
Sub Title (in English)  
Keyword(1) High-Density SRAM  
Keyword(2) Dual-Power-Supply  
Keyword(3) Wordline Driver  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yuki Fujimura  
1st Author's Affiliation Toshiba Corporation (Toshiba Co.)
2nd Author's Name Osamu Hirabayashi  
2nd Author's Affiliation Toshiba Corporation (Toshiba Co.)
3rd Author's Name Atsushi Kawasumi  
3rd Author's Affiliation Toshiba Corporation (Toshiba Co.)
4th Author's Name Azuma Suzuki  
4th Author's Affiliation Toshiba Corporation (Toshiba Co.)
5th Author's Name Yasuhisa Takeyama  
5th Author's Affiliation Toshiba Corporation (Toshiba Co.)
6th Author's Name Keiichi Kushida  
6th Author's Affiliation Toshiba Corporation (Toshiba Co.)
7th Author's Name Takahiko Sasaki  
7th Author's Affiliation Toshiba Corporation (Toshiba Co.)
8th Author's Name Akira Katayama  
8th Author's Affiliation Toshiba Corporation (Toshiba Co.)
9th Author's Name Gou Fukano  
9th Author's Affiliation Toshiba Corporation (Toshiba Co.)
10th Author's Name Takaaki Nakazato  
10th Author's Affiliation Toshiba Corporation (Toshiba Co.)
11th Author's Name Yasushi Shizuki  
11th Author's Affiliation Toshiba Corporation (Toshiba Co.)
12th Author's Name Natsuki Kushiyama  
12th Author's Affiliation Toshiba Corporation (Toshiba Co.)
13th Author's Name Tomoaki Yabe  
13th Author's Affiliation Toshiba Corporation (Toshiba Co.)
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Speaker Author-1 
Date Time 2009-04-14 10:15:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2009-5 
Volume (vol) vol.109 
Number (no) no.2 
Page pp.21-26 
#Pages
Date of Issue 2009-04-06 (ICD) 


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