Paper Abstract and Keywords |
Presentation |
2008-04-17 09:25
[Invited Talk]
A Single-Power-Supply 0.7V 1GHz 45nm SRAM with an Asymmetrical Unit β-ratio Memory Cell Takahiko Sasaki, Atsushi Kawasumi, Tomoaki Yabe, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida (Toshiba Corp.), Akihito Tohata (Toshiba Microelectronics Corp.), Akira Katayama, Gou Fukano, Yuki Fujimura, Nobuaki Otsuka (Toshiba Corp.) ICD2008-1 Link to ES Tech. Rep. Archives: ICD2008-1 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A single-power supply $64kB$ SRAM is fabricated in a $45nm$ bulk CMOS technology. The SRAM operates at $1GHz$ with a $0.7V$ supply using a fine-grained bit line segmentation architecture and with an asymmetrical unit-$\beta$-ratio 6T cell. With the asymmetrical cell, we save $22\%$ cell area compared to a conventional symmetrical cell. This bulk SRAM is designed for $GHz$-class sub-$1V$ operation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SRAM / asymmetrical Cell / low voltage / High performance / Mobile / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 6, ICD2008-1, pp. 1-6, April 2008. |
Paper # |
ICD2008-1 |
Date of Issue |
2008-04-10 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ICD2008-1 Link to ES Tech. Rep. Archives: ICD2008-1 |
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