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| Presentation | 2008-04-12 11:25 Low-temperature formation of poly-Ge on insulator by metal-induced lateral crystallization Takashi Hagihara, Kaoru Toko, Taizoh Sadoh (Kyushu Univ.)  SDM2008-20 OME2008-20 Link to ES Tech. Rep. Archives: SDM2008-20 OME2008-20 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Metal-induced lateral crystallization (MILC) of Ge was investigated to realize extremely low-temperature (≦250℃) formation of poly-Ge films on insulator. It was found that the growth velocity of Ni-MILC at 375oC was significantly increased by applying an electric field (200-500 V/cm). However, the growth temperature could not be decreased to <350oC, because an extremely high electric fields (>2500V/cm) was necessary at the low-temperatures, but Ge films were evaporated under such a high electric field. Thus, effects of other catalyst metals (Cu, Pd, Co) were examined. As a result, extremely low-temperature (250oC) growth with a high velocity (~2 m/h) was realized by using Cu as catalyst. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | metal-induced lateral crystallization / germanium / thin-film transistor / low-temperature crystallization / electric-field-induced crystallization / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 1, SDM2008-20, pp. 101-106, April 2008. | |
| Paper # | SDM2008-20 | |
| Date of Issue | 2008-04-04 (SDM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-20 OME2008-20 Link to ES Tech. Rep. Archives: SDM2008-20 OME2008-20 |
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| Conference Information | |
| Committee | SDM OME |
| Conference Date | 2008-04-11 - 2008-04-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa Seinen Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | TFT Materials, Devices, and Applications and Others related to SDM and OME activity |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-04-SDM-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-temperature formation of poly-Ge on insulator by metal-induced lateral crystallization |
| Sub Title (in English) | * |
| Keyword(1) | metal-induced lateral crystallization |
| Keyword(2) | germanium |
| Keyword(3) | thin-film transistor |
| Keyword(4) | low-temperature crystallization |
| Keyword(5) | electric-field-induced crystallization |
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| 1st Author's Name | Takashi Hagihara |
| 1st Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 2nd Author's Name | Kaoru Toko |
| 2nd Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 3rd Author's Name | Taizoh Sadoh |
| 3rd Author's Affiliation | Kyushu University (Kyushu Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-04-12 11:25:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2008-20, OME2008-20 |
| Volume (vol) | vol.108 |
| Number (no) | no.1(SDM), no.2(OME) |
| Page | pp.101-106 |
| #Pages | 6 |
| Date of Issue | 2008-04-04 (SDM, OME) |
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