講演抄録/キーワード |
講演名 |
2007-12-14 16:55
選択成長を用いたSOI基板上Ge pin フォトダイオ-ドのレスポンシビティスペクトラム ○朴 成鳳・石川靖彦・和田一実(東大)・土澤 泰・渡辺俊文・山田浩治・板橋聖一(NTT) エレソ技報アーカイブへのリンク:OPE2007-144 |
抄録 |
(和) |
(まだ登録されていません) |
(英) |
We investigated the strain effect on spectral responsivity of Ge photodiodes. Ge vertical pin photodiodes with the size of 10x200 (m) were fabricated via selective epitaxial growth (SEG) of Ge on a Si-on-insulator substrate (SOI). The responsivity spectrum was extended to the longer wavelength regime (absorption red-shift) than the absorption spectrum of an unstrained Ge, which is due to tensile strain in the Ge mesa. However, the degree of the red-shift was diminished compared to the photodiode fabricated by Ge blanket growth on bulk Si substrates. This indicates that the selective Ge mesa on SOI is less strained than the blanket Ge on a bulk Si. By utilizing the localized reciprocal space mapping, the strain distribution in the selective Ge mesa was described. As experimental parameters such as Ge thickness, annealing temperature and annealing duration were fixed, strains in Ge epilayers on a SOI and a bulk Si substrates were compared. The mechanisms of decrease of responsivity red-shift in the photodiode fabricated by Ge SEG on SOI will be discussed. |
キーワード |
(和) |
/ / / / / / / |
(英) |
Ge photodiode / selective epitaxial growth / Si-on-insulator / responsivity / strain relaxation / / / |
文献情報 |
信学技報, vol. 107, no. 389, OPE2007-144, pp. 47-51, 2007年12月. |
資料番号 |
OPE2007-144 |
発行日 |
2007-12-07 (OPE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
エレソ技報アーカイブへのリンク:OPE2007-144 |