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Paper Abstract and Keywords
Presentation 2006-10-05 13:00
X-band AlGaN/GaN HEMT with over 40W Output Power
Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba corp.) Link to ES Tech. Rep. Archives: ED2006-152 CPM2006-89 LQE2006-56
Abstract (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with 11.52 mm gate periphery exhibits output power of over 39.8W with a power added efficiency (PAE) of 28.4% under VDS=30V, CW operating condition at 9.5GHz.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN / GaN / HEMT / X-band / 40W / high power / channel temperature /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 269, ED2006-152, pp. 1-5, Oct. 2006.
Paper # ED2006-152 
Date of Issue 2006-09-28 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF Link to ES Tech. Rep. Archives: ED2006-152 CPM2006-89 LQE2006-56

Conference Information
Committee ED CPM LQE  
Conference Date 2006-10-05 - 2006-10-06 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2006-10-ED-CPM-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) X-band AlGaN/GaN HEMT with over 40W Output Power 
Sub Title (in English)  
Keyword(1) AlGaN  
Keyword(2) GaN  
Keyword(3) HEMT  
Keyword(4) X-band  
Keyword(5) 40W  
Keyword(6) high power  
Keyword(7) channel temperature  
Keyword(8)  
1st Author's Name Yasushi Kashiwabara  
1st Author's Affiliation Komukai Operations, Toshiba corporation (Toshiba corp.)
2nd Author's Name Kazutoshi Masuda  
2nd Author's Affiliation Komukai Operations, Toshiba corporation (Toshiba corp.)
3rd Author's Name Keiichi Matsushita  
3rd Author's Affiliation Komukai Operations, Toshiba corporation (Toshiba corp.)
4th Author's Name Hiroyuki Sakurai  
4th Author's Affiliation Komukai Operations, Toshiba corporation (Toshiba corp.)
5th Author's Name Shinji Takatsuka  
5th Author's Affiliation Komukai Operations, Toshiba corporation (Toshiba corp.)
6th Author's Name Kazutaka Takagi  
6th Author's Affiliation Komukai Operations, Toshiba corporation (Toshiba corp.)
7th Author's Name Hisao Kawasaki  
7th Author's Affiliation Komukai Operations, Toshiba corporation (Toshiba corp.)
8th Author's Name Yoshiharu Takada  
8th Author's Affiliation Corporate R&D canter,Toshiba corporation (Toshiba corp.)
9th Author's Name Kunio Tsuda  
9th Author's Affiliation Corporate R&D canter,Toshiba corporation (Toshiba corp.)
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Speaker Author-1 
Date Time 2006-10-05 13:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2006-152, CPM2006-89, LQE2006-56 
Volume (vol) vol.106 
Number (no) no.269(ED), no.270(CPM), no.271(LQE) 
Page pp.1-5 
#Pages
Date of Issue 2006-09-28 (ED, CPM, LQE) 


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