Paper Abstract and Keywords |
Presentation |
2006-10-05 13:00
X-band AlGaN/GaN HEMT with over 40W Output Power Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba corp.) Link to ES Tech. Rep. Archives: ED2006-152 CPM2006-89 LQE2006-56 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with 11.52 mm gate periphery exhibits output power of over 39.8W with a power added efficiency (PAE) of 28.4% under VDS=30V, CW operating condition at 9.5GHz. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN / GaN / HEMT / X-band / 40W / high power / channel temperature / |
Reference Info. |
IEICE Tech. Rep., vol. 106, no. 269, ED2006-152, pp. 1-5, Oct. 2006. |
Paper # |
ED2006-152 |
Date of Issue |
2006-09-28 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
Link to ES Tech. Rep. Archives: ED2006-152 CPM2006-89 LQE2006-56 |
Conference Information |
Committee |
ED CPM LQE |
Conference Date |
2006-10-05 - 2006-10-06 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
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Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
ED |
Conference Code |
2006-10-ED-CPM-LQE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
X-band AlGaN/GaN HEMT with over 40W Output Power |
Sub Title (in English) |
|
Keyword(1) |
AlGaN |
Keyword(2) |
GaN |
Keyword(3) |
HEMT |
Keyword(4) |
X-band |
Keyword(5) |
40W |
Keyword(6) |
high power |
Keyword(7) |
channel temperature |
Keyword(8) |
|
1st Author's Name |
Yasushi Kashiwabara |
1st Author's Affiliation |
Komukai Operations, Toshiba corporation (Toshiba corp.) |
2nd Author's Name |
Kazutoshi Masuda |
2nd Author's Affiliation |
Komukai Operations, Toshiba corporation (Toshiba corp.) |
3rd Author's Name |
Keiichi Matsushita |
3rd Author's Affiliation |
Komukai Operations, Toshiba corporation (Toshiba corp.) |
4th Author's Name |
Hiroyuki Sakurai |
4th Author's Affiliation |
Komukai Operations, Toshiba corporation (Toshiba corp.) |
5th Author's Name |
Shinji Takatsuka |
5th Author's Affiliation |
Komukai Operations, Toshiba corporation (Toshiba corp.) |
6th Author's Name |
Kazutaka Takagi |
6th Author's Affiliation |
Komukai Operations, Toshiba corporation (Toshiba corp.) |
7th Author's Name |
Hisao Kawasaki |
7th Author's Affiliation |
Komukai Operations, Toshiba corporation (Toshiba corp.) |
8th Author's Name |
Yoshiharu Takada |
8th Author's Affiliation |
Corporate R&D canter,Toshiba corporation (Toshiba corp.) |
9th Author's Name |
Kunio Tsuda |
9th Author's Affiliation |
Corporate R&D canter,Toshiba corporation (Toshiba corp.) |
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Speaker |
Author-1 |
Date Time |
2006-10-05 13:00:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2006-152, CPM2006-89, LQE2006-56 |
Volume (vol) |
vol.106 |
Number (no) |
no.269(ED), no.270(CPM), no.271(LQE) |
Page |
pp.1-5 |
#Pages |
5 |
Date of Issue |
2006-09-28 (ED, CPM, LQE) |
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