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| Presentation | 2005-11-17 14:00 A High Humidity Resistance and High Power Density TaN/Au T-gate pHEMT for Ka-band Applications Hirotaka Amasuga, Seiki Goto, Toshihiko Shiga, Masahiro Totsuka, Hajime Sasaki, Tetsuo Kunii, Yoshitsugu Yamamoto, Akira Inoue, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) Link to ES Tech. Rep. Archives:  ED2005-166 MW2005-121 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A 0.8 W/mm high power pHEMT with high resistance to humidity is reported. By using tantalum nitride as the refractory gate metal and a silicon nitride layer prepared by a catalytic chemical vapor deposition technique for passivation of this transistor, tough moisture resistance was obtained showing no Id degradation even after 1000 hours at 130 degrees centigrade and 85% humidity. Moreover, the Schottky breakdown voltage of the TaN gate is higher than that of a WSiN gate. A one-stage prematched amplifier with the new pHEMT has achieved 0.8 W/mm output power at Vd = 8 V, with 8.5 dB gain and 40% power added efficiency in the Ka-band. These are some of the highest power figures ever reported. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Ka-band / HEMT / humidity resistance / tantalum nitride / catalytic chemical vapor deposition / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 105, no. 400, ED2005-166, pp. 45-49, Nov. 2005. | |
| Paper # | ED2005-166 | |
| Date of Issue | 2005-11-10 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: ED2005-166 MW2005-121 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2005-11-17 - 2005-11-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2005-11-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A High Humidity Resistance and High Power Density TaN/Au T-gate pHEMT for Ka-band Applications |
| Sub Title (in English) | |
| Keyword(1) | Ka-band |
| Keyword(2) | HEMT |
| Keyword(3) | humidity resistance |
| Keyword(4) | tantalum nitride |
| Keyword(5) | catalytic chemical vapor deposition |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hirotaka Amasuga |
| 1st Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 2nd Author's Name | Seiki Goto |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 3rd Author's Name | Toshihiko Shiga |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 4th Author's Name | Masahiro Totsuka |
| 4th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 5th Author's Name | Hajime Sasaki |
| 5th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 6th Author's Name | Tetsuo Kunii |
| 6th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 7th Author's Name | Yoshitsugu Yamamoto |
| 7th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 8th Author's Name | Akira Inoue |
| 8th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 9th Author's Name | Tomoki Oku |
| 9th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 10th Author's Name | Takahide Ishikawa |
| 10th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
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| Speaker | Author-1 |
| Date Time | 2005-11-17 14:00:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2005-166, MW2005-121 |
| Volume (vol) | vol.105 |
| Number (no) | no.400(ED), no.401(MW) |
| Page | pp.45-49 |
| #Pages | 5 |
| Date of Issue | 2005-11-10 (ED, MW) |
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