・世界で初めてトレンチ・パワーＭＯＳＦＥＴを提案し、低オン抵抗を実証。
1. D. Ueda, H. Takagi, A. Shimano, and G. Kano, “New Sidewall-Channel Power MOSFET with Rectangular Grooves”, Extended Abstract of 16th
International Conference on Solid-State Device and Materials, pp.
313-316, 1984

・強誘電体を化合物半導体と集積化する技術の概要解説
2. Daisuke Ueda, “Implementation of GaAs Monolithic Microwave Integrated Circuits with On-chip BST Capacitors”, Invited paper,
Journal of Electroceramics 3:2, pp.105-113, 1999, Springer Netherlands

・窒化物半導体デバイスを電力応用に展開する技術の解説
3. Daisuke Ueda, T. Murata, M. Hikita, S. Nakazawa, M. Kuroda, H. Ishida, M. Yanagihara, K. Inoue, T. Ueda, Y. Uemoto, T. Tanaka, T. Egawa,
“AlGaN/GaN devices for future power switching systems”, Invited Paper,
Technical Digests of IEEE International Electron Device Meeting (IEDM),
Dec. 2005, Page(s):377-380