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"Sub-micrometer MOSFET structures for minimizing channel hot-carrier Generation,"
IEEE Trans. Electron Devices, vol. ED-29, pp. 611-618, April, 1982.
E. Takeda, H. Kume, Y. Nakagome, T. Makino, A. Shimizu, and S. Asai,
"An As-P (n+ - n-) double diffused drain MOSFET for VLSI's,"
IEEE Trans. Electron Devices, vol. ED-30, pp. 652-657, June, 1983.
E. Takeda and N.Suzuki,
"An empirical model for device degradation due to hot carrier injection,"
vol. EDL-4, pp. 111-113, April, 1983.