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武田 英次

  1. E. Takeda, H. Kume, T. Toyabe, and S. Asai,
    "Sub-micrometer MOSFET structures for minimizing channel hot-carrier Generation,"
    IEEE Trans. Electron Devices, vol. ED-29, pp. 611-618, April, 1982.

  2. E. Takeda, H. Kume, Y. Nakagome, T. Makino, A. Shimizu, and S. Asai,
    "An As-P (n+ - n-) double diffused drain MOSFET for VLSI's,"
    IEEE Trans. Electron Devices, vol. ED-30, pp. 652-657, June, 1983.

  3. E. Takeda and N.Suzuki,
    "An empirical model for device degradation due to hot carrier injection,"
    vol. EDL-4, pp. 111-113, April, 1983.





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