三村高志

1. T. Mimura, S. Hiyamizu, T. Fujii, and K. Nanbu:
   "A New Field-Effect Transistor with Selectively Doped GaAs/n- AlGaAs Heterojunctions"
   
   Japan. J. Appl. Phys
   vol. 19, 1980, pp L225-L227
   
   
   
2. T. Mimura, S. Hiyamizu, K. Joshin and K. Hikosaka:
   "Enhancement-Mode High Electron Mobility Transistors for Logic Applications"
   
   Japan. J. Appl. Phys
   vol. 20, No. 5, 1981, pp. L317-L319
   
   
   
3. T. Mimura, K. Joshin, S. Hiyamizu, K. Hikosaka, and M. Abe:
   "High Electron Mobility Transistor Logic"
   
   Japan. J. Appl. Phys
   vol. 20, pp. L598-L600, 1981