Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films
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 . FOREWORD ........................................................ 475
        Hiroshi ISHIWARA

INVITED PAPER
=============
 . Limitations on ULSI-FeRAMs ...................................... 477
        James F. SCOTT

PAPERS
======
 . Ferroelectric Memory Circuit Technology and the Application to
   Contactless IC Card ............................................. 488
        Koji ASARI, Hiroshige HIRANO, Toshiyuki HONDA, Tatsumi SUMI,
        Masato TAKEO,Nobuyuki MORIWAKI, George NAKANE, Tetsuji
        NAKAKUMA, Shigeo CHAYA, Toshio MUKUNOKI,Yuji JUDAI, Masamichi
        AZUMA, Yasuhiro SHIMADA, and Tatsuo OTSUKI

 . Effects of Post-Annealing on Dielectric Properties of (Ba, Sr) TiO3
   Thin Films Prepared by Liquid Source Chemical Vapor Deposition .. 497
        Tsuyoshi HORIKAWA, Junji TANIMURA, Takaaki KAWAHARA, Mikio
        YAMAMUKA,Masayoshi TARUTANI, and Kouichi ONO

 . Dielectric and Ferroelectric Properties of Heteroepitaxial
   BaxSr1-xTiO3 Films Grown on SrRuO3/SrTiO3 Substrates ............ 505
        Kazuhide ABE, Naoko YANASE, Shuichi KOMATSU, Kenya SANO, Noburu
        FUKUSHIMA,and Takashi KAWAKUBO

 . Properties of Ferroelectric Memory with Ir System Materials as
   Electrodes ...................................................... 513
        Naoki IZUMI, Yoshikazu FUJIMORI, Takashi NAKAMURA, and Akira
        KAMISAWA

 . Improved Resistance Against the Reductive Ambient Annealing of
   Ferroelectric Pb(Zr, Ti)O3 Thin Film Capacitors with IrO2 Top
   Electrode ....................................................... 518
        Yoshihisa FUJISAKI, Keiko KUSHIDA-ABDELGHAFAR, Hiroshi MIKI,and
        Yasuhiro SHIMAMOTO

 . Hetero-Epitaxial PbZr0.48Ti0.52O3 Capacitors with Oxide Electrodes
            ........................................................ 523
        Mitsuo SUGA, Masahiko HIRATANI, Choichiro OKAZAKI, Masanari
        KOGUCHI,and Hiroshi KAKIBAYASHI

 . Effect of Zr/Ti Ratio on the Reliability Characteristics Behavior of
   Sol-Gel Derived PZT Films onPt/IrO2 Electrode ................... 528
        Katsuyoshi MATSUURA, Kazuaki TAKAI, Tetsuro TAMURA, Hiroshi
        ASHIDA, and Seigen OTANI

 . Formation of Reliable Pb(Ti, Zr)O3 Thin-Film Capacitors for
   Read/Write Endurance of Ferroelectric Non-volatile Memories ..... 537
        Katsuhiro AOKI, Yukio FUKUDA, Ken NUMATA, and Akitoshi
        NISHIMURA

 . Structural Defects in Sr0.7Bi2.3Ta2O9 Thin Film for Ferroelectric
   Memory .......................................................... 545
        Tetsuya OSAKA, Sachiko ONO, Akira SAKAKIBARA, and Ichiro KOIWA

 . Crystallization Process of Sr0.7Bi2.3Ta2O9 Thin Films with Different
   Crystal Orientation Prepared by Chemical Liquid Deposition Using
   Alkoxide Precursor .............................................. 552
        Ichiro KOIWA, Takao KANEHARA, Juro MITA, Tetsuya OSAKA, Sachiko
        ONO,Akira SAKAKIBARA, and Tomonori SEKI

 . SrBi2Ta2O9 Thin Films Fabricated by Sol-Gel Method with IrO2
   Electrodes ...................................................... 560
        Yukihisa OKADA, Ichiro KOIWA, Kinya ASHIKAGA, and Katsuaki
        KAIFU

 . Di/Ferroelectric Properties of Bismuth Based Layered Ferroelectric
   Films for Application toNon-volatile Memories ................... 566
        Hitoshi TABATA, Takeshi YANAGITA, and Tomoji KAWAI

 . Study of Ferroelectric Materials for Ferroelectric Memory FET ... 572
        Yoshikazu FUJIMORI, Naoki IZUMI, Takashi NAKAMURA, and Akira
        KAMISAWA

 . Numerical Analysis of Metal-Ferroelectric-Semiconductor
   Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous
   Ferroelectric Polarization ...................................... 577
        Tatsuya KAMEI, Eisuke TOKUMITSU, and Hiroshi ISHIWARA

 . MFMIS Structure for Nonvolatile Ferroelectric Memory Using PZT Thin
   Film ............................................................ 584
        Toshiyuki KAWASAKI, Yoshikazu AKIYAMA, Shunsuke FUJITA, and
        Shiro SATOH

LETTER
======
 . Preparation of Ferroelectric Sr0.7Bi2.3Ta2O9 Thin Films by Misted
   Deposition Method Using Alkoxide Solution ....................... 590
        Ichiro KOIWA, Yukihisa OKADA, and Juro MITA

Regular Section
===============
PAPERS
======
[Electronic Circuits]

 . Application of Circuit-Lelel Hot-Carrier Reliability Simulation to
   Memory Design ................................................... 595
        Peter M. LEE, Tsuyoshi SEO, Kiyoshi ISE, Atsushi HIRAISHI,
        Osamu NAGASHIMA,and Shoji YOSHIDA

[Components]

 . A Study on Vertically Installed Planar (VIP) Combline Bandpass
   Filters via 3D-FDTD Method ...................................... 602
        Chuandong ZHAO and Ikuo AWAI

LETTERS
=======
[Quantum Electronics]

 . A Simple Digital-to-Analog Conversion Technique Using
   Single-Electron Transistor ...................................... 608
        Su Jin AHN and Dae Mann KIM

[Opto-Electronics]

 . Thermal Characteristics of a New Type Fiber Fabry-Perot
   Interferometer Buried in a Fiber Connector Housing .............. 612
        Mitsuhiro TATEDA, Shinya SUZUKI, Takashige OMATSU, and Akira
        HASEGAWA

[Electromagnetic Theory]

 . Electromagnetic Wave Scattering from a Body Moving in an Arbitrary
   Direction through Use of the Body Fitted Grid Generation with
   Moving Boundary: Quasi-Stationary Approximation ................. 615
        Michiko KURODA, Hideyoshi ISOBE, and Hiroyuki KASAI

 . Analysis of Plane Wave Scattering by a Conducting Thin Plate and a
   Criterion for Ray Tracing Method ................................ 618
        Kazunori UCHIDA, Tetsuro IMAI, Teruya FUJII, and Masaharu HATA

 . ABSTRACTS (IEICE Trans., Vol.J81-C-I, J81-C-II, No.4 in Japanese)
            ........................................................ 622