Special Issue on the 1995 Symposium on VLSI Circuits ==================================================== (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.31, No.4 April 1996) ==================================================================================== . FOREWORD ........................................................ 881 A.Iwata and I.Young PAPERS ====== [Communications] . A 2.5-Gb/s 15-mW Clock Recovery Circuit ......................... 883 B.Razavi . 46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz Static Frequency Divider in Silicon Bipolar Technology ...................................... 892 A.Felder, M.Moller, J.Popp, J.Bock, and H.-M.Rein [Logic] . A 250-622 MHz Deskew and Jitter-Suppressed Clock Buffer Using Two-Loop Architecture ........................................... 898 S.Tanoi, T.Tanabe, K.Takahashi, S.Miyamoto, and M.Uesugi . An 80-MOPS-Peak High-Speed and Low-Power-Consumption 16-b Digital Signal Processor ................................................ 905 H.Kabuo, M.Okamoto, I.Tanaka, H.Yasoshima, S.Marui, M.Yamasaki, T.Sugimura, K.Ueda,T.Ishikawa, H.Suzuki, and R.Asahi . A 286 MHz 64-b Floating Point Multiplier with Enhanced CG Operation ........................................................ 915 H.Makino, H.Suzuki, H.Morinaka, Y.Nakase, K.Mashiko, and T.Sumi . An Efficient Charge Recovery Logic Circuit ...................... 925 Y.Moon and D.-K.Jeong [Interface Circuits] . A Low Power and High Speed Data Transfer Scheme with Asynchronous Compressed Pulse Width Modulation for AS-Memory ................. 934 T.Yamauchi, Y.Morooka, and H.Ozaki . Capacitance Coupling Immune, Transient Sensitive Accelerator for Resistive Interconnect Signals of Subquarter Micron ULSI ........ 942 T.Iima, M.Mizuno, T.Horiuchi, and M.Yamashina [Memory] . A 90-MHz 16-Mb System Integrated Memory with Direct Interface to CPU ........................................................ 948 K.Dosaka, A.Yamazaki, N.Watanabe, H.Abe, J.Ohtani, T.Ogawa, K.Ishihara, and M.Kumanoya . A Current Direction Sense Technique for Multiport SRAM's ........ 957 M.Izumikawa and M.Yamashina . Driving Source-Line Cell Architecture for Sub-1-V High-Speed Low-Power Applications .......................................... 963 H.Mizuno and T.Nagano . Fault-Tolerant Designs for 256 Mb DRAM .......................... 969 T.Kirihata, Y.Watanabe, H.Wong, J.K.DeBrosse, M.Yoshida, D.Katoh, S.Fujii, M.R.Wordeman,P.Poechmueller, S.A.Parke, and Y.Asao . A 286 mm2 256 Mb DRAM with ~32 Both-Ends DQ .................... 978 Y.Watanabe, H.Wong, T.Kirihata, D.Kato, J.K.DeBrosse, T.HARA, M.Yoshida, H.Mukai,K.N.Quader, T.Nagai, P.Poechmueller, P.Pfefferl, M.R.Wordeman, and S.Fujii . A Mixed-Mode Voltage Down Converter with Impedance Adjustment Circuitry for Low-Voltage High-Frequency Memories ............... 986 T.Ooishi, Y.Komiya, K.Hamade, M.Asakura, K.Yasuda, K.Furutani, T.Kato, H.Hidaka,and H.Ozaki . SOI-DRAM Circuit Technologies for Low Power High Speed Multigiga Scale Memories .................................................. 997 S.Kuge, F.Morishita, T.Tsuruda, S.Tomishima, M.Tsukude, T.Yamagata, and K.Arimoto . Cell-Plate-Line/Bit-Line Complementary Sensing (CBCS) Architecture for Ultra Low-Power DRAM's ..................................... 1003 T.Hamamoto, Y.Morooka, M.Asakura, and H.Ozaki . A Double-Level-Cth Select Gate Array Architecture for Multilevel NAND Flash Memories ............................................ 1013 K.Takeuchi, T.Tanaka, and H.Nakamura . ABSTRACTS (IEICE Trans., Vol.J79-C-I, J79-C-II, No.7 in Japanese) ....................................................... 1021