Special Issue on Ultra-High-Speed Electron Devices ================================================== . FOREWORD ....................................................... 1153 Kazuhito FURUYA INVITED PAPERS ============== . Process and Device Technologies for High Speed Self-Aligned Bipolar Transistors .................................................... 1154 Tohru NAKAMURA, Takeo SHIBA, Takahiro ONAI, Takashi UCHINO, Yukihiro KIYOTA,Katsuyoshi WASHIO and Noriyuki HOMMA . High Speed GaAs Digital Integrated Circuits .................... 1165 Masahiro AKIYAMA, Seiji NISHI, and Yasushi KAWAKAMI . Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors .................................................... 1171 Kenji KURISHIMA, Hiroki NAKAJIMA, Shoji YAMAHATA, Takashi KOBAYASHI,and Yutaka MATSUOKA PAPERS ====== . Device Figure-of-Merits for High-Speed Digital ICs and Baseband Amplifiers ..................................................... 1182 Eiichi SANO, Yutaka MATSUOKA, and Tadao ISHIBASHI . A 0.1ƒÊm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications ................................................... 1189 Masami TOKUMITSU, Kazumi NISHIMURA, Makoto HIRANO, and Kimiyoshi YAMASAKI . Low Power Dissipation GaAs DCFL 2.5 Gbps 16-bit Multiplexer/Demultiplexer LSIs ................................. 1195 Norio HIGASHISAKA, Masaaki SHIMADA, Akira OHTA, Kenji HOSOGI, Kazuo KUBO, and Noriyuki TANINO . A 15-Gbit/s Si-Bipolar Gate Array .............................. 1203 Ryuusuke KAWANO, Minoru TOGASHI, Chikara YAMAGUCHI, Yoshiji KOBAYASHI,and Masao SUZUKI . Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer ....................................................... 1210 Kazuhiko NAKAHARA, Yasushi ITOH, Yoshie HORIIE, Takeshi SAKURA, Naohito YOSHIDA, Takayuki KATOH, Tadashi TAKAGI, Yasuo MITSUI, and Yasuyuki ITO . 60-GHz HEMT-Based MMIC One-Chip Receiver ....................... 1216 Tamio SAITO, Norio HIDAKA, Yoji OHASHI, Kazuo SHIRAKAWA, Yoshihiro KAWASAKI,Toshihiro SHIMURA, Hideyuki OIKAWA, and Yoshio AOKI . An Accurate FET Model for Microwave Nonlinear Circuit Simulation ....................................................... 1223 Junko ONOMURA, Shigeru WATANABE, and Susumu KAMIHASHI . Direct Efficiency and Power Calculation Method and Its Application to Low Voltage High Efficiency Power Amplifier ................. 1229 Kazutomi MORI, Masatoshi NAKAYAMA, Yasushi ITOH, Satoshi MURAKAMI,Yasuharu NAKAJIMA, Tadashi TAKAGI, and Yasuo MITSUI . A High Efficiency GaAs Power Amplifier of 4.6V Operation for 1.5GHz Digital Cellular Phone Systems ................................. 1237 Akihisa SUGIMURA, Kazuki TATEOKA, Hidetoshi FURUKAWA, and Kunihiko KANAZAWA . Power Heterojunction FETs for Low-Voltage Digital Cellular Applications ................................................... 1241 Keiko INOSAKO, Naotaka IWATA, and Masaaki KUZUHARA . A Low-Voltage GaAs One-Chip Oscillator IC for Laser-Diode Noise Suppression .................................................... 1246 Tsuyoshi TANAKA, Hideo NAGAI, and Daisuke UEDA LETTER ====== . A Wideband Monolithic Lossy Match Power Amplifier Having an LPF/HPF-Combined Interstage Network ............................ 1252 Mitsuru MOCHIZUKI, Yasushi ITOH, Masatoshi NII, Tadashi TAKAGI, and Yasuo MITSUI Regular Section =============== PAPERS ====== [Integrated Electronics] . Design of the Basic Cell and Metallized RAM for 0.5ƒÊm CMOS Gate Array .......................................................... 1255 Yoji NISHIO, Hideo HARA, Masahiro IWAMURA, Yasuo KAMINAGA, Katsunori KOIKE,Kosaku HIROSE, Takayuki NOTO, Satoshi OGUCHI, Yoshihiko YAMAMOTO, and Takeshi ONO . Evaluation of Fixed Charge and Interface Trap Densities in SIMOX Wafers and Their Effects on Device Characteristics ............. 1263 Shoichi MASUI, Tatsuo NAKAJIMA, Keisuke KAWAMURA, Takayuki YANO, Isao HAMAGUCHI, and Masaharu TACHIMORI [Electronic Circuits] . Acceleration Factor for Tarnish Testing of Silver Contact Surface ....................................................... 1273 Terutaka TAMAI and Yasuhiro KURANAGA [Semiconductor Materials and Devices] . A Super Low Noise AllnAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching ................................................. 1279 Naohito YOSHIDA, Toshiaki KITANO, Yoshitsugu YAMAMOTO, Takayuki KATOH,Hiroyuki MINAMI, Takuo KASHIWA, Takuji SONODA, Hirozo TAKANO, and Osamu ISHIHARA [Opto-Electronics] . Optical Information Processing by Synthesis of the Coherence Function --Photonic/Video Hybrid System-- ...................... 1286 Toru OKUGAWA and Kazuo HOTATE [Electronic Displays] . Characteristics of Micromechanical Electrostatic Switch for Active Matrix Displays ................................................ 1292 Takashi NISHIO, Chiharu KOSHIO, Kunimoto TSUCHIYA, and Tetsuya MATSUMOTO [Electromagnetic Theory] . Scattering of Electromagnetic Plane Waves by a Perfectly Conducting Wedge: The Case of E Polarization .............................. 1298 Michinari SHIMODA, Tokuya ITAKURA, and Yuko YAMADA LETTERS ======= [Electronic Circuits] . Design of a Novel MOS VT Extractor Circuit ..................... 1306 Koichi TANNO, Okihiko ISHIZUKA, and Zhen TANG [Opto-Electronics] . GaInAsP/InP Square Buried-Heterostructure Surface-Emitting Lasers Regrown by MOCVD ............................................... 1311 Seiji UCHIYAMA and Susumu KASHIWA [Electromagnetic Theory] . Reduction of Critical Power in All-Optical Switching with Series-Tapered Nonlinear Directional Coupler ................... 1315 Guosheng PU, Tetsuya MIZUMOTO, Kenichiro ITO, Yoshiki HIGASHIDE, and Yoshiyuki NAITO . ABSTRACTS (IEICE Trans., Vol.J78-C-I, J78-C-II, No.9 in Japanese) ....................................................... 1319