Special Issue on Quarter Micron Si Device and Process Technologies ================================================================== . FOREWORD ........................................................ 341 Eisuke ARAI INVITED PAPERS ============== . Thinned Silicon Layers on Oxide Film, Quartz and Sapphire by Wafer Bonding ......................................................... 342 Takao ABE and Yasuyuki NAKAZATO PAPERS ====== [Device Technology] . LATID(Large-Angle-Tilt Implanted Drain) FETs with Buried n- Profile for Deep-Submicron ULSIs ........................................ 350 Junji HIRASE, Takashi HORI and Yoshinori ODAKE . A 0.25-ƒÊm BiCMOS Technology Using SOR X-Ray Lithography .. 355 Shinsuke KONAKA, Hakaru KYURAGI, Toshio KOBAYASHI, Kimiyoshi DEGUCHI, Eiichi YAMAMOTO, Shigehisa OHKI and Yousuke YAMAMOTO . Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD) ............................... 362 Yukihiro KIYOTA, Tohru NAKAMURA and Taroh INADA . Hot Carrier Evaluation of TFT by Emission Microscopy ............ 367 Junko KOMORI, Jun-ichi MITSUHASHI and Shigenobu MAEDA . Degradation Mechanisms of Thin Film SIMOX SOI-MOSFET Characteristics --Optical and Electrical Evaluation-- ........... 373 Mitsuru YAMAJI, Kenji TANIGUCHI, Chihiro HAMAGUCHI, Kazuo SUKEGAWA and Seiichiro KAWAMURA . Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs ........................................................ 379 Satoshi KAMIYAMA, Hiroshi SUZUKI, Pierre-Yves LESAICHERRE and Akihiko ISHITANI . (Ba0.75Sr0.25)TiO3 Films for 256 Mbit DRAM ...................... 385 Tsuyoshi HORIKAWA, Noboru MIKAMI, Hiromi ITO, Yoshikazu OHNO, Tetsuro MAKITA and Kazunao SATO . Application of Ferroelectric Thin Films to Si Devices ........... 392 Koji ARITA, Eiji FUJII, Yasuhiro SHIMADA, Yasuhiro UEMOTO, Masamichi AZUMA, Shinichiro HAYASHI, Toru NASU, Atsuo INOUE, Akihiro MATSUDA, Yoshihisa NAGANO, Shin-ichi KATSU, Tatsuo OTSUKI, Gota KANO, Larry D. McMILLAN and Carlos A. Paz de ARAUJO . Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method ............................................... 399 Yoshikazu OHNO, Hiroshi KIMURA, Ken-ichiro SONODA, Tadashi NISHIMURA, Shin-ichi SATOH, Hirokazu SAYAMA, Shigenori HARA, Mikio TAKAI and Hirokazu MIYOSHI . Design Rule Relaxation Approach for High-Density DRAMs .......... 406 Takanori SAEKI, Eiichiro KAKEHASHI, Hidemitu MORI, Hiroki KOGA, Kenji NODA, Mamoru FUJITA, Hiroshi SUGAWARA, Kyoichi NAGATA, Shozo NISHIMOTO and Tatsunori MUROTANI [Process Technology] . New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns ................................. 416 Masaru SASAGO, Takahiro MATSUO, Kazuhiro YAMASHITA, Masayuki ENDO, Kouji MATSUOKA, Taichi KOIZUMI, Akiko KATSUYAMA and Noboru NORURA . Optimization of Optical Parameters in KrF Excimer Laser Lithography for Quarter-Micron Lines Pattern ................................ 425 Keiichiro TOUNAI and Kunihiko KASAMA . High Performance Lithography with Advanced Modified Illumination 432 Ho-Young KANG, Cheol-Hong KIM, Joong-Hyun LEE, Woo-Sung HAN and Young-Bum KOH . Enhancement of Defocus Characteristics with Intermediate Phase Interference in Phase Shift Method .............................. 438 Hiroshi OHTSUKA, Toshio ONODERA, Kazuyuki KUWAHARA and Takashi TAGUCHI . High Speed Electron Beam Cell Projection Exposure System ........ 445 Yoshihiko OKAMOTO, Norio SAITOU, Haruo YODA and Yoshio SAKITANI . Evaluation of Plasma Damage to Gate Oxide ....................... 453 Yukiharu URAOKA, Koji ERIGUCHI, Tokuhiko TAMAKI and Kazuhiko TSUJI . Elimination of Negative Charge-Up during High Current Ion Implantation .................................................... 459 Kazunobu MAMENO, Atsuhiro NISHIDA, Hideharu NAGASAWA, Hideaki FUJIWARA, Koji SUZUKI and Kiyoshi YONEDA . Influences of Magnesium and Zinc Contaminations on Dielectric Breakdown Strength of MOS Capacitors ............................ 464 Makoto TAKIYAMA, Susumu OHTSUKA, Tadashi SAKON and Masaharu TACHIMORI . Water Desorption Control of Interlayer Dielectrics to Reduce MOSFET Hot Carrier Degradation ......................................... 473 Kimiaki SHIMOKAWA, Takashi USAMI and Masaki YOSHIMARU . Ti Salicide Process for Subquarter-Micron CMOS Devices .......... 480 Ken-ichi GOTO, Tatsuya YAMAZAKI, Yasuo NARA, Tetsu FUKANO, Toshihiro SUGII, Yoshihiro ARIMOTO and Takashi ITO . Identification of the Particle Source in LSI Manufacturing Process Equipment ....................................................... 486 Yoshimasa TAKII, Nobuo AOI and Yuichi HIROFUJI . Removal of Particles on Si Wafers in SC-1 Solution .............. 492 Hiroyuki KAWAHARA, Kenji YONEDA, Izumi MUROZONO and Yoshihiro TODOKORO Regular Section =============== PAPERS ====== [Electronic Circuits] . Stability of an Active Two Port Network in terms of S Parameters 498 Yoshihiro MIWA [Opto-Electronics] . Modified Numerical Technique for Beam Propagation Method Based on the Galerkin's Technique ........................................ 510 Guosheng PU, Tetsuya MIZUMOTO and Yoshiyuki NAITO LETTERS ======= [Integrated Electronics] . Temperature Adaptive Voltage Reference Network for Realizing a Transconductance with Low Temperature Sensitivity ............... 515 Rabin RAUT . ABSTRACTS(Trans. IEICE, Vol.J77-C-‡T, J77-C-‡U, No.3 in Japanese) ........................................................ 519 . IEICE TECHNICAL REPORTS/CONTENTS ................................ 521