Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93) ========================================================================= . FOREWORD ......................................................... 91 Kunihiro ASADA PAPERS ====== [Process Simulation] . Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations ....................................................... 92 Ernst STRASSER, Gerhard SCHROM, Karl WIMMER and Siegfried SELBERHERR . Material Representations and Algorithms for Nanometer Lithography Simulation ....................................................... 98 Edward W.SCHECKLER, Taro OGAWA, Shoji SHUKURI and Eiji TAKEDA . Evaluation of Two-Dimensional Transient Enhanced Diffusion of Phosphorus during Shallow Junction Formation .................... 106 Hisako SATO, Katsumi TSUNENO and Hiroo MASUDA . Dynamic-Clustering and Grain-Growth Kinetics Effects on Dopant Diffusion in Polysilicon ........................................ 112 Masami HANE and Shinya HASEGAWA . Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree ...................................... 118 Hannes STIPPEL and Siegfried SELBERHERR . Mechanical Stress Analysis of Trench Isolation Using a Two-Dimensional Simulation ...................................... 124 Satoshi MATSUDA, Nobuyuki ITOH, Chihiro YOSHINO, Yoshiroh TSUBOI, Yasuhiro KATSUMATA and Hiroshi IWAI . Two-Dimensional Modeling of Self-Aligned Silicide Processes with the General-Purpose Process Simulator OPUS .......................... 129 Kazuhiko KAI, Shigeki KURODA and Kenji NISHI [Device Modeling] . A non-Local Formulation of Impact Ionization for Silicon ........ 134 Paul G.SCROBOHACI and Ting-wei TANG . A Unified Model for the Simulation of Small-Geometry Devices .... 139 Anna PIERANTONI, Paolo CIAMPOLINI, Andrea LIUZZO and Giorgio BACCARANI . On the Origin of Tunneling Currents in Scaled Silicon Devices ... 148 Andreas SCHENK, Ulrich KRUMBEIN, Stephan MUNLLER, Harmut DETTMER and Wolfgang FICHTNER . Theoretical Analysis of Transconductance Enhancement Caused by Electron-Concentration-Dependent Screening in Heavily Doped Systems ........................................................ 155 Shirun HO, Aya MORIYOSHI, Isao OHBU, Osamu KAGAYA, Hiroshi MIZUTA and Ken YAMAGUCHI [Device Simulation] . Modeling and Simulation on Degradation of Submicron NMOSFET Current Drive due to Velocity- Saturation Effects ....................... 161 Katsumi TSUNENO, Hisako SATO and Hiroo MASUDA . An Integrated Efficient Method for Deep-Submicron EPROM/Flash Device Simulation Using Energy Transport Model ......................... 166 Jack Zezhong PENG, Steve LONGCOR and Jeffrey FREY . Monte Carlo Analysis of Velocity Overshoot Effects in Bipolar Devices with and without an i-Layer ............................. 174 Yoshiroh TSUBOI, Claudio FIEGNA, Enrico SANGIORGI, Bruno RICCOM, Tetsunori WADA, Yasuhiro KATSUMATA and Hiroshi IWAI . Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT) ........................................................... 179 Hermann BRAND and Siegfried SELBERHERR . Dynamic Simulation of Multiple Trapping Processes and Anomalous Frequency Dependence in GaAs MESFETs ............................ 187 Shirun HO, Masaki OOHIRA, Osamu KAGAYA, Aya MORIYOSHI, Hiroshi MIZUTA and Ken YAMAGUCHI [Coupled Device & Circuit Modeling] . New Insights in Optimizing CMOS Inverter Circuits with Respect to Hot-Carrier Degradation ......................................... 194 Peter M.LEE . Influence of Energy Transport Related Effects on NPN BJT Device Performance and ECL Gate Delay Analysed by 2D Parallel Mixed Level Device/Circuit Simulation ....................................... 200 Matthias STECHER, Bernd MEINERZHAGEN, Ingo BORK, Joachim M.J.KRUNCKEN, Peter MAAS and Walter L.ENGL . MUSIC: A Novel Multilevel Simulator for Integrated Circuits ..... 206 Zsolt MikloLs KOVALCS-VAJNA, Arrigo BENEDETTI, Sergio GRAFFI and Guido MASETTI [Numerics] . Comparison between a posteriori Error Indicators for Adaptive Mesh Generation in Semiconductor Device Simulation ................... 214 Katsuhiko TANAKA, Paolo CIAMPOLINI, Anna PIERANTONI and Giorgio BACCARANI . A System for 3D Simulation of Complex Si and Heterostructure Devices ........................................................ 220 Paolo CONTI, Masaaki TOMIZAWA and Akira YOSHII . Space-Time Galerkin/Least-Squares Finite Element Formulation for the Hydrodynamic Device Equations ................................... 227 N.R.ALURU, Kincho H.LAW, Peter M.PINSKY, Arthur RAEFSKY, Ronald J.G.GOOSSENS and Robert W.DUTTON . Efficient Transient Device Simulation with AWE Macromodels and Domain Decomposition ............................................ 236 Howard C.READ, Shigetaka KUMASHIRO and Andrzej STROJWAS . Algorithms for Drift-Diffusion Device Simulation Using Massively Parallel Processors ............................................. 248 Eric TOMACRUZ, Jagesh V.SANGHAVI, Alberto SANGIOVANNI-VINCENTELLI Regular Section =============== PAPERS ====== [Integrated Electronics] . Tantalum Dry-Etching Characteristics for X-Ray Mask Fabrication . 255 Akira OZAWA, Shigehisa OHKI, Masatoshi ODA and Hideo YOSHIHARA . An Automated On-Chip Direct Wiring Modification for High Performance LSIs ............................................................ 263 Akio ANZAI, Mikinori KAWAJI and Takahiko TAKAHASHI . Estimation of Yield Suppression for 1.5V-1Gbit DRAMs Caused by Threshold Voltage Variation of MOSFET due to Microscopic Fluctuation in Dopant Distributions ............................. 273 Shigeyoshi WATANABE and Takaaki MINAMI [Electronic Circuits] . 2MHz Power Converter with Piezoelectric Ceramic Transformer ..... 280 Toshiyuki ZAITSU, Takeshi INOUE, Osamu OHNISHI and Yasuhiro SASAKI [Semiconductor Materials and Devices] . Bandgap Narrowing and Incomplete Ionization Calculations for the Temperature Range from 40K up to 400K ........................... 287 Yevgeny V. MAMONTOV and Magnus WILLANDER [Opto-Electronics] . Numerical Analysis of a Symmetric Nonlinear Directional Coupler . 298 Hiroshi MAEDA and Kiyotoshi YASUMOTO . Numerical Synthesis of Multilayer Cladding Optical Waveguides by a Random Sampling Method .......................................... 303 Shuichiro ASAKAWA and Yasuo KOKUBUN [Electromagnetic Theory] . A Study on Magnetostatic Surface Wave Excitation by Microstrip .. 312 Tatsuya OMORI, Ken'ichiro YASHIRO and Sumio OHKAWA LETTERS ======= [Opto-Electronics] . Effects of Trench Location on the Attenuation Constant in Bent Step-Index Optical Waveguides ................................... 319 Junji YAMAUCHI, Takashi ANDO, Morihiko IKEGAYA and Hisamatsu NAKANO [Electromagnetic Theory] . Hybrid Modes of Goubau Line ..................................... 322 Ken-ichi SAKINA and Jiro CHIBA . ABSTRACTS (Trans. IEICE, Vol.J77-C-I, J77-C-II, No.2 in Japanese) ........................................................ 326 . IEICE TECHNICAL REPORTS/CONTENTS ................................ 331 * This contents of IEICE Technical Reports will be discontinued from the April issue, 1994.